A Comparison between neutron diffraction and EBSD images for a TlBr crystal

Watanabe, Kenichi*; Hitomi, Keitaro*; Nogami, Mitsuhiro*; Maeda, Shigetaka   ; Ito, Chikara   ; Tanno, Takashi  ; Onabe, Hideaki*

TlBr is a compound semiconductor with a high atomic number, high density and a wide bandgap, and is being developed as a gamma-ray detector material that can be operated at room temperature and has high detection efficiency. There is neutron diffraction in order to establish a crystal quality evaluation method for improving the yield in device fabrication, but the facilities that can be implemented are limited to large facilities such as J-PARC. The Electron Backscatter Diffraction (EBSD) image, which is one of the electron beam diffractions, can be obtained with an electron microscope, but only the information on the crystal surface can be obtained. In this study, the crystal orientation image was acquired for the TlBr crystal by neutron Bragg dip imaging, which is one of the neutron diffractions, and EBSD. By comparing both images, the applicability to a simple EBSD crystal quality evaluation method was examined.