Determination of site occupancy of boron in 6H-SiC by multiple-wavelength neutron holography

Hayashi, Koichi*; Lederer, M.*; Fukumoto, Yohei*; Goto, Masashi*; Yamamoto, Yuta*; Happo, Naohisa*; Harada, Masahide   ; Inamura, Yasuhiro  ; Oikawa, Kenichi   ; Oyama, Kenji*; Wellmann, P.*

The local structure around boron doped in a 6H-type silicon carbide (SiC) was investigated using neutron holography. Three dimensional atomic images reconstructed from multiple-wavelength holograms revealed the boron substitution for both silicon and carbon. To determine the boron locations accurately, we calculated holograms with varying occupancies of six different sites and fitted the image intensities with those obtained from the experimental holograms by the steepest descent method. As a result, it was found that boron atoms were selectively located at the Si-C-cubic site layer. Furthermore, boundaries right above the boron locations were suggested from the absence of atomic images in the upper region of the reconstruction.