Reliability issues in Nitrided SiC MOS devices

Kobayashi, Takuma*; Nakanuma, Takato*; Suzuki, Asato*; Sometani, Mitsuru*; Okamoto, Mitsuo*; Yoshigoe, Akitaka ; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

We investigated the reliability of nitrided SiC MOS devices in terms of oxide leakage and flatband voltage stability. Although nitrided MOS devices on non-basal planes are known to have superior on-state performances, we found that the nitridation not only leads to pronounced oxide leakage but also hampers the flatband voltage stability in response to electron and hole injection. In the presentation, we will show how the nitridation modifies the MOS interfaces based on the results of synchrotron radiation X-ray photoelectron spectroscopy and discuss the possible cause of reliability degradation.