Roles of excess minority carrier recombination and chemisorbed O species at SiO/Si interfaces in Si dry oxidation; Comparison between p-Si(001) and n-Si(001) surfaces

Tsuda, Yasutaka   ; Yoshigoe, Akitaka ; Ogawa, Shuichi*; Sakamoto, Tetsuya*; Yamamoto, Yoshiki*; Yamamoto, Yukio*; Takakuwa, Yuji*

This paper gives experimental evidence for that (1) the excess minority carrier recombination at the SiO/p-Si(001) and SiO/n-Si(001) interfaces is associated with the O dissociative adsorption, (2) the 700-eV X-ray induced enhancement of the SiO growth is not caused by the band flattening due to the surface photovoltaic effect but ascribed to the electron-hole pair creation due to core level photoexcitation for the spillover of the bulk Si electronic states to the SiO layer, (3) changes of band bending result from the excess minority carrier recombination at the oxidation-induced vacancy site when turning on and off the X-ray irradiation, and (4) a metastable chemisorbed O species (Pb1-paul) plays a decisive role in combining two kinds of the reaction loops of single- and double-step oxidation. Based on the experimental results, the unified Si oxidation reaction model mediated by point defect generation [Jpn. J. Appl. Phys. 59, SM0801 (2020)] is extended from a viewpoint of (a) the excess minority carrier recombination at the oxidation-induced vacancy site and (b) the trapping-mediated adsorption through the chemisorbed O species at the SiO/Si interface.