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Roles of excess minority carrier recombination and chemisorbed O$$_{2}$$ species at SiO$$_{2}$$/Si interfaces in Si dry oxidation; Comparison between p-Si(001) and n-Si(001) surfaces

Tsuda, Yasutaka   ; Yoshigoe, Akitaka ; Ogawa, Shuichi*; Sakamoto, Tetsuya*; Yamamoto, Yoshiki*; Yamamoto, Yukio*; Takakuwa, Yuji*

This paper gives experimental evidence for that (1) the excess minority carrier recombination at the SiO$$_2$$/p-Si(001) and SiO$$_2$$/n-Si(001) interfaces is associated with the O$$_2$$ dissociative adsorption, (2) the 700-eV X-ray induced enhancement of the SiO$$_2$$ growth is not caused by the band flattening due to the surface photovoltaic effect but ascribed to the electron-hole pair creation due to core level photoexcitation for the spillover of the bulk Si electronic states to the SiO$$_2$$ layer, (3) changes of band bending result from the excess minority carrier recombination at the oxidation-induced vacancy site when turning on and off the X-ray irradiation, and (4) a metastable chemisorbed O$$_2$$ species (Pb1-paul) plays a decisive role in combining two kinds of the reaction loops of single- and double-step oxidation. Based on the experimental results, the unified Si oxidation reaction model mediated by point defect generation [Jpn. J. Appl. Phys. 59, SM0801 (2020)] is extended from a viewpoint of (a) the excess minority carrier recombination at the oxidation-induced vacancy site and (b) the trapping-mediated adsorption through the chemisorbed O$$_2$$ species at the SiO$$_2$$/Si interface.



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Category:Chemistry, Physical



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