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Report No.

Observation of chemisorbed O$$_2$$ molecule at SiO$$_2$$/Si(001) interface during Si dry oxidation

Tsuda, Yasutaka   ; Yoshigoe, Akitaka ; Ogawa, Shuichi*; Sakamoto, Tetsuya*; Takakuwa, Yuji*

We irradiated n-Si(001) with a 0.06 eV supersonic O$$_2$$ molecular beam and characterized the SiO$$_2$$ surface and SiO$$_2$$/Si interface using real-time X-ray photoemission spectroscopy. The molecularly-adsorbed O$$_2$$ was observed not only during the Si surface oxidation process but also during the SiO$$_2$$/Si interface oxidation process, suggesting that trapping-mediated adsorption occurs at SiO$$_2$$/Si interface as well as on the Si surface. We found a good linear correlation between the SiO$$_2$$/Si interface oxidation rate and the amount of molecularly-adsorbed O$$_2$$, revealing that the double-step oxidation loop exclusively proceeds through P$$_{b1}$$-paul formation and minority carrier trapping at room temperature. The offset of the linear correlation indicates the presence of ins-paul on the SiO$$_2$$ surface, which has nothing to do with the double-step oxidation loop because point defect generation is not affected by the volume expansion of ins-paul oxidation in the flexible SiO$$_2$$ network.



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