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Uniaxial stress-driven one-dimensional reconstructed silicon surfaces

Asaoka, Hidehito  ; Yano, Masahiro   ; Terasawa, Tomoo   ; Yasuda, Satoshi   

The anisotropic Si(110) structure has a potential to be tailored self-assembled nanostructures by using uniaxial extrinsic stress. Reversibly two directions of one-dimensional reconstructed silicon surface appeared while changing the ratio of each region corresponding to direction of applying uniaxial stress. We succeeded in controlling uniaxial stress-driven one-dimensional reconstructed silicon surfaces.

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