Improvement of a method for growing single crystals of novel superconductor UTe

Sakai, Hironori ; Opletal, P. ; Tokiwa, Yoshifumi ; Yamamoto, Etsuji ; Tokunaga, Yo ; Kambe, Shinsaku ; Haga, Yoshinori

The superconducting transition temperature $T_{rm c}$ in the spin-triplet superconductor UTe increases from the initial reported value of 1.6 K to 2.0 K as the newly reported one improving the growth condition. We have developed a growth method for the superconductor UTe that is different from the usual chemical vapor phase transport method. As a result, we have succeeded in growing high-purity UTe crystals at $T_{rm c}$ =2.1 K and confirmed that the residual specific heat below $T_{rm c}$ is very low and the residual ratio of electrical resistance is very large. We report the optimization of the newly developed method for UTe.

Language	:	Japanese
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Meeting title	:	日本物理学会2022年秋季大会(物性)
Held date	:	2022/09
Location (city)	:	東京
Location (country)	:	日本
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Keywords	:	スピン三重項超伝導体; 単結晶育成
Research Facility	:	第4研究棟
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Registration No. : BB20220997
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