Formation of monolayer VSe from multilayer VSe films via V- and Se-desorption

VおよびSe脱着による多層VSe膜からの単層VSeの形成

角田 一樹   ; 日下 翔太郎*; 竹田 幸治   ; 小林 功佳*; 平原 徹*

Sumida, Kazuki; Kusaka, Shotaro*; Takeda, Yukiharu; Kobayashi, Katsuyoshi*; Hirahara, Toru*

We systematically investigated the electronic properties of monolayer and multilayer vanadium selenide films grown with different conditions using in situ angle-resolved photoemission spectroscopy and first-principles calculations. We observed the band dispersions of pristine VSe in a sample grown at substrate temperature () of 250C, while the significant modulations of the Se-derived bands can be seen at = 380C. For = 420C, we found that the V self-intercalated VSe was formed. As a simple and convenient way, we also demonstrate that the monolayer VSe can be fabricated by annealing from the multilayer VSe film, and the possible formation mechanism is discussed. The establishment of the growth methods of VSe film and verifying its electronic properties provide the substantial step for the creation of the 2D vDW heterostructures.