/GaN MOS structures by oxygen and hydrogen annealingOnishi, Kentaro*; Kobayashi, Takuma*; Mizobata, Hidetoshi*; Nozaki, Mikito*; Yoshigoe, Akitaka 
; Shimura, Takayoshi*; Watanabe, Heiji*
GaO
interlayer at SiO/GaN interfaces is easily reduced during the annealing process, leading to threshold voltage instability of MOS devices. In this study, we formed SiO by sputter deposition to minimize the growth of unstable GaO interlayer. Furthermore, by performing oxygen and hydrogen annealing, a stable GaN MOS structure with good interface and insulating properties was realized.
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: | Japanese |
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: | 2022/12 |
Location (city) |
: | 福岡 |
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: | 日本 |
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Keywords |
: | パワー半導体; GaN; 放射光光電子分光; MOS Transistors; MOSFET; 金属酸化膜形電界効果トランジスタ; Ga酸化物 |
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