Muon-induced SEU cross sections of 12-nm FinFET and 28-nm planar SRAMs

Gomi, Yuibi*; Takami, Kazusa*; Mizuno, Rurie*; Niikura, Megumi*; Deng, Y.*; Kawase, Shoichiro* ; Watanabe, Yukinobu*; Abe, Shinichiro   ; Liao, W.*; Tampo, Motonobu*; Umegaki, Izumi*; Takeshita, Soshi*; Shimomura, Koichiro*; Miyake, Yasuhiro*; Hashimoto, Masanori*

It has been suggested that the effect of muon-induced soft errors will increase by shrinking of the semiconductor process. However, muon irradiation experiments for FinFETs has not been reported. We performed positive and negative muon irradiation experiments on 12-nm FinFET and 28-nm planar SRAMs at MUSE in J-PARC. The negative muon-induced single event upset (SEU) cross section is more than ten times larger than that of the positive muon. The negative muon-induced SEU cross section of FinFETs decreases by the same ratio as neutron-induced one compared to planar SRAMs.