Pressure engineering of van der Waals compound RhI; Bandgap narrowing, metallization, and remarkable enhancement of photoelectric activity

Fang, Y.*; Kong, L.*; Wang, R.*; Zhang, Z.*; Li, Z.*; Wu, Y.*; Bu, K.*; Liu, X.*; Yan, S.*; Hattori, Takanori   ; Li, N.*; Li, K.*; Liu, G.*; Huang, F.*

The layered van der Waals halides are particularly sensitive to external pressure, suggesting a feasible route to pinpoint their structure with extraordinary behavior. However, a very sensitive pressure response usually lead to a detrimental phase transition and/or lattice distortion, making the approach of materials manipulation in a continuous manner remain challenging. Here, the extremely weak interlayer coupling and high tunability of layered RhI crystals are observed. A pressure-driven phase transition occurs at a moderate pressure of 5 GPa, interlinking to a change of layer stack mode. Strikingly, such a phase transition does not affect the tendency of quasi-linear bandgap narrowing, and a metallization with an ultra-broad tunability of 1.3 eV redshift is observed at higher pressures. Moreover, the carrier concentration increases by 4 orders of magnitude at 30 GPa, and the photocurrent enhances by 5 orders of magnitude at 7.8 GPa. These findings create new opportunities for exploring, tuning, and understanding the van der Waals halides by harnessing their unusual feature of a layered structure, which is promising for future devices based on materials-by-design that are atomically thin.