Effect of resonant core-level excitation in an atom on photoemission from the neighboring atoms

Baba, Yuji*  ; Shimoyama, Iwao   

The effect of a core-to-valence resonant photoexcitation in an atom on photoemission from the neighboring atoms has been experimentally investigated. For SiO fine powder mixed with boron nitride matrix, it was found that the intensity of the O photoelectrons was reduced around the Si resonant photoexcitation. On the other hand, the intensity of the B or N photoelectrons from the matrix material did not change regardless of the photon energy. Similar phenomenon was also observed for SiN powder mixed with cellulose as a matrix material. The results demonstrated that photoemission from the nearest-neighbor atoms that are directly bound to silicon is perturbated by the core-to-valence resonant photoexcitation in silicon. Using the phenomenon, it is expected that species of the nearest neighbor atom can be identified by a resonant core-level excitation in a target atom.