New SiC kicker power supply for J-PARC

Takayanagi, Tomohiro   ; Ono, Ayato; Sugita, Moe ; Yamamoto, Kazami   ; Oguri, Hidetomo  ; Kinsho, Michikazu  ; Horino, Koki*; Ueno, Tomoaki*; Oda, Kodai*; Tokuchi, Akira*; Ikoma, Naoya*

A new kicker power supply using SiC-MOSFETs is under development at J-PARC. The base circuit uses an induction voltage superposition circuit of the LTD method, and the semiconductor module circuit consists of a radial symmetry type that achieves low noise. The three main parts of an existing kicker power supply, the thyratron, PFN circuit, and end clipper, can be configured in a single module circuit. The power supply consists of a main circuit module board that forms a trapezoidal pulse and a correction circuit module board that compensates for droop of the flat section. The thirty-two main circuit module boards and twenty correction circuit module boards are connected in series in a hierarchical manner to achieve the waveform specifications required for J-PARC RCS kicker power supplies. In addition, an insulating cylinder for conductors has been developed that suppresses corona discharge and withstands continuous operation for long periods of time.