Crystal quality evaluation of a large TlBr crystal using neutron Bragg-dip imaging

Watanabe, Kenichi*; Hitomi, Keitaro*; Nogami, Mitsuhiro*; Maeda, Shigetaka   ; Onabe, Hideaki*

Thallium bromide (TlBr) is a compound semiconductor attractive for gamma-ray spectrometers. TlBr detectors have shown excellent energy resolution, however, these results were obtained from relatively small crystal detectors. The next phase of TlBr development is to increase the detector size and improve the yield rate of detector production. So far, we have evaluated crystal quality of TlBr by using the neutron Bragg-dip imaging, which is one of the neutron diffraction techniques. In this study, we prepared a large TlBr crystal wafer with a diameter and thickness of 50 mm and 12 mm, respectively. We evaluated the quality of the large crystal by the neutron Bragg-dip imaging. The center region of the large TlBr crystal confirmed to be uniform and well-aligned. As a future work, we will evaluate the electric properties, such as the mobility-lifetime product, at various positions in this large crystal.