Impact of irradiation side on muon-induced single-event upsets in 65-nm Bulk SRAMs

Deng, Y.*; Watanabe, Yukinobu*; Manabe, Seiya*; Liao, W.*; Hashimoto, Masanori*; Abe, Shinichiro   ; Tampo, Motonobu*; Miyake, Yasuhiro*

With the miniaturization of semiconductors and the decrease in operating voltage, there is a growing interest and discussion in whether the muons in cosmic rays may be the source of single event upsets (SEUs). In the case of neutron-induced SEUs, it was reported that the irradiation side has the impact on SEU cross sections. Here, to investigate the impact of irradiation direction on muon-induced SEUs, we have measured and simulate muon-induced SEUs in 65-nm bulk SRAMs with different muon irradiation directions. It was found that the peak SEU cross section for the package side irradiation is about twice large as that for the board side irradiation. We also revealed that the difference in observed SEU cross sections between the package side and the board side irradiation is caused by differences in energy straggling due to changes in penetration depth depending on the incident direction.