Muon-induced SEU analysis and simulation for different cell types in 12-nm FinFET SRAMs, and 28-nm planar SRAMs and register files

Gomi, Yuibi*; Takami, Kazusa*; Mizuno, Rurie*; Niikura, Megumi*; Yasuda, Ryuichi*; Deng, Y.*; Kawase, Shoichiro* ; Watanabe, Yukinobu*; Abe, Shinichiro   ; Liao, W.*; Tampo, Motonobu*; Takeshita, Soshi*; Shimomura, Koichiro*; Miyake, Yasuhiro*; Hashimoto, Masanori*

The study of muon-induced soft errors in terrestrial settings remains underexplored even though the incidence of muon-induced soft errors tends to increas. In this study, we conducted positive and negative muon irradiation experiments on four types of 12-nm FinFET SRAMs. At the momentum where the SEU cross section peaks, 2-fin cells exhibit larger SEU cross sections than 1-fin cells for negative muons. Conversely, for positive muons, the SEU cross section is larger in 1-fin cells than in 2-fin cells due to the increased diffusion capacitance in 2-fin cells. We also performed the Monte Carlo simulations. The results suggest that a single sensitive volume with the same critical charge value cannot consistently reproduce the SEU cross sections for both types of muons.