Validating terrestrial SER in 12-, 28-, and 65-nm SRAMs estimated by simulation coupled with one-time neutron irradiation

Takami, Kazusa*; Gomi, Yuibi*; Yasuda, Ryuichi*; Abe, Shinichiro   ; Ito, Masatoshi*; Kanda, Hiroki*; Fukuda, Mitsuhiro*; Hashimoto, Masanori*

Neutron-induced soft errors in the terrestrial environment pose reliability issues for semiconductor devices. We have developed the new method for estimating terrestrial SER based on simulation coupled with one-time irradiation using a conventional neutron source. This method has been validated using 65-nm planar SRAMs. However, with the ongoing progression of process shrinkage and the increasing adoption of devices fabricated with newer processes, there is a growing demand for further experimental validation of the terrestrial SER estimation method for these advanced processes. In this work, we validated the estimation method for 12-nm 1-fin FinFETs and 28-nm planer SRAMs. The SERs estimated by our method were consistent with the SERs measured using a white neutron beam at RCNP within 28% error.