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Growth mechanism of segregated germanene revealed by in-situ Raman spectroscopy

Terasawa, Tomoo   ; Katsube, Daiki*; Yano, Masahiro   ; Ozawa, Takahiro*; Tsuda, Yasutaka   ; Yoshigoe, Akitaka ; Asaoka, Hidehito  ; Suzuki, Seiya   

Germanene, a monolayer honeycomb lattice of Ge atoms, is theoretically predicted to have both a linear band dispersion and a band gap of 23.9 meV and is expected to be a next-generation semiconductor material. The purpose of the present study was to elucidate the growth mechanism of germanene by in situ Raman scattering spectroscopy in a vacuum chamber. The results suggest that Ge atoms crystallize as sp3Ge at around 300 degrees C, but when the temperature is raised to 500 degrees C and then lowered to around 300 degrees C, germanene is formed.

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