Development of a fast-rising short-pulse high-voltage power supply using SiC-MOSFETs for the J-PARC kicker system

高柳 智弘   ; 小野 礼人*; 堀野 光喜*; 植野 智晶*; 杉田 萌 ; 不破 康裕   ; 篠崎 信一 ; 徳地 明*; 生駒 直弥*; 亀崎 広明*

Takayanagi, Tomohiro; Ono, Ayato*; Horino, Koki*; Ueno, Tomoaki*; Sugita, Moe; Fuwa, Yasuhiro; Shinozaki, Shinichi; Tokuchi, Akira*; Ikoma, Naoya*; Kamezaki, Hiroaki*

J-PARC has developed a new kicker power supply that takes advantage of the high-speed characteristics of SiC-MOSFETs and replaces the thyratron with a semiconductor-type switch. In addition, the three main components of the kicker power supply currently in operation, the silatron, PFN circuit, and end clipper, were combined on a single board as a new modular circuit board to achieve a smaller power supply. The modular circuit of the new power supply consists of two types of boards: a main board that forms trapezoidal pulses and a compensation board that compensates flatness droop. 32 main boards and 20 compensation boards are connected in series in a hierarchical manner to achieve the rated specifications required for the RCS kicker system. This presentation will report on the test results, power-saving characteristics of the next-generation semiconductor switch, and results of suppressing corona discharges that occur at high voltages.