Controlling dual Mott states by hydrogen doping to perovskite rare-earth nickelates

Matsuzawa, Ikuya*; Fukutani, Katsuyuki; 5 of others*

Doping hydrogen in correlated oxides is a promising way to control the materials functionalities. With in situ measurements of the resistance and hydrogen concentration by a nuclear reaction analysis, we have derived the detailed relation between the resistance and hydrogen concentration () for NiO $_{3}$ H $_{x}$ ( = Sm, Nd, and La), which reveal a clear resistance jump at a certain concentration. Taking account of the spatial distribution of hydrogen in both in-plane and depth directions, we have clarified that an insulating state is realized at and another insulating state is formed at . The electronic mechanisms for the two states are proposed in terms of Mott phases.

Language	:	English
Journal	:	Physical Review Materials (Internet)
Volume	:	7
Number	:	8
Pages	:	p.085003_1 - 085003_6
Publication Year/Month	:	2023/08
Meeting title	:
Held date	:
Location (city)	:
Location (country)	:
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1103/PhysRevMaterials.7.085003
DOI for research data	:	Link to research data related to this paper/report.
Keywords	:	no keyword
Research Facility	:
Press Release	:
JAEA R&D Navigator	:
Cooperating Institute	:

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:69.61 Category:Materials Science, Multidisciplinary
Altmetrics	:

Registration No. : AA20240680
JAEA Abstracts No. : 53000198
Paper Submission No. : 28984

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.