渡辺 賢一*; 須貝 優介*; 長谷川 創大*; 人見 啓太朗*; 野上 光博*; 篠原 武尚 
; Su, Y. H. ; Parker, J. D.*; Kockelmann, W.*
Watanabe, Kenichi*; Sugai, Yusuke*; Hasegawa, Sota*; Hitomi, Keitaro*; Nogami, Mitsuhiro*; Shinohara, Takenao; Su, Y. H.; Parker, J. D.*; Kockelmann, W.*
Thallium bromide (TlBr) semiconductor detectors are promising candidates for high-detection-efficiency, high-energy-resolution, and room-temperature gamma-ray spectrometers. In this study, we conducted neutron Bragg dip and electron backscatter diffraction (EBSD) imaging of TlBr crystals to measure the crystal orientation distribution. We confirmed that crystal grains were continuous over a certain distance along the solidification direction for samples fabricated with the current growth procedure.
発表言語 |
: | English |
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巻 |
: | 36 |
号 |
: | 1 |
ページ数 |
: | p.149 - 154 |
発行年月 |
: | 2024/01 |
キーワード |
: | no keyword |
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パーセンタイル：67.31 分野：Instruments & Instrumentation |
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