Erratum: "Hydrogen impurities in p-type semiconductors, GeS and GeTe" [J. Appl. Phys. 130, 195701 (2021)]

中村 惇平*; 川北 至信  ; 下村 浩一郎*; 末益 崇*

Nakamura, Jumpei*; Kawakita, Yukinobu; Shimomura, Koichiro*; Suemasu, Takashi*

In the paper "Hydrogen impurities in p-type semiconductors, GeS and GeTe." [J. Appl. Phys. 130, 195701 (2021)], typographical errors on page 195701-2 in the Introduction are corrected. The description that "The optical bandgap has been reported to be in the range of 0.3-0.7 eV" for GeTe is corrected to an appropriate range of 0.15-0.7 eV. In addition, for the description that "the band alignment for GeTe was determined using polarized Raman spectroscopy and," is corrected to "the band alignment for GeS was determined using optical absorption spectra and." In Results and Discussion. Equation (7) is corrected properly by adding the redundant Dirac constant in the rite hand side.