Influence of steam flow rate on oxidation kinetics of silicon carbide at 1400-1600 C

Pham, V. H.   ; Kurata, Masaki ; Nagae, Yuji ; Ishibashi, Ryo*; Sasaki, Masana*

Being expected as materials for accident tolerant fuel cladding tube, oxidation behavior and kinetics of silicon carbide (SiC) under extreme conditions like severe accidents must be elucidated. In this study, oxidation tests of SiC at 1400-1600 C for 1-5 h, at atmospheric pressure, under two different flow rates of HO/Ar gas mixture have been conducted to investigate the influence of steam flow rate on the formation of SiO scale and its subsequent volatilization. The oxidation tests were conducted via a newly developed test facility using laser as a heat source. Oxidation kinetics of SiC was evaluated via mass change of samples before and after the oxidation tests. Parabolic oxidation rate representative for SiO formation and linear volatilization rate reflecting its volatilization were calculated, based on these mass changes. The Arrhenius dependence of the parabolic oxidation and linear volatilization rate constants were then plotted. Results of this study indicated that SiC exhibits excellent performance under the conditions investigated. Steam flow rate has a significant influence on volatilization of SiO but has minor effects over its formation. Oxidation of SiC in steam at high temperature may follow mass gain or mass loss regime, depending on the steam flow rate. Two oxidation patterns were suggested and discussed. In the first oxidation pattern, the SiO formation is dominated over its volatilization. The second oxidation pattern (steady stage) is reached when the SiO formation rate is equivalent to its volatilization rate. Time to reach this steady stage was defined, based on the parabolic oxidation rate and linear volatilization rate.