Effect of potassium doping on the electrical properties of stacked graphene layers

Yamada, Takatoshi*; Ogawa, Shuichi*; Yoshigoe, Akitaka ; Tsuda, Yasutaka   ; Masuzawa, Tomoaki*; Okada, Mitsuhiro*; Kobashi, Kazufumi*; Okigawa, Yuki*

Effect of potassium (K) concentration on electrical properties of stacked graphene layers was investigated. Stacked graphene layers were fabricated by repeated wet transfer process using chemical vapor deposited (CVD) single layer graphene on copper foils. Two kinds of K concentration in potassium hydroxide (KOH) solutions were used to change the K concentration in the stacked graphene layers. Non-doped stacked graphene layers were also fabricated as reference. In synchrotron-radiation X-ray photoelectron spectra, peaks due to K and carbon (C) were obtained. It was found from the obtained peak intensities that K/C peak intensity ratio was increase with increasing of K concentration in KOH solution. No defect or damage in the stacked graphene layers during doping process using KOH solutions was not formed from results of Raman spectroscopy. Sheet resistance, sheet carrier density and carrier mobility were measured by means of Hall effect measurements. Carrier polarity was changed from hole to electron by K doping. Although the sheet carrier densities of lightly and heavily K-doped graphene layers were almost same, the highest carrier mobility was obtained for lightly K-doped graphene layers. Electrons are doped from K atoms to compensate for the naturally existing holes in the stacked graphene layers, and the excess electrons doped from K atoms in the conduction band, which were measured the sheet carrier density, contribute to carrier transport. However, the additional K atoms act as scattering centers and inhibit carrier transport, which explains the decrease in carrier density in the highly K-doped graphene layers.