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Metallization and pressure-induced superconductivity in carrier doped excitonic insulator (Ta$$_{1-x}$$Ti$$_x$$)$$_2$$NiSe$$_5$$

Tsuchida, Shun*; Hirose, Yusuke; Sekikawa, Takuya; Ono, Yoshiaki*; Hirahara, Takuya*; Sano, Sumika*; Kawaguchi, Shogo*; Kobayashi, Shintaro*; Uwatoko, Yoshiya*; Settai, Rikio*

We investigated the carrier doping effect on an excitonic insulator Ta$$_2$$NiSe$$_5$$ by means of the electrical resistivity $$rho$$ and Hall coefficient $$R_{rm H}$$ using single crystals of (Ta$$_{1-x}$$Ti$$_x$$)$$_2$$NiSe$$_5$$, and band calculation. The excitonic transition temperature $$T_{rm c}$$ is continuously suppressed to 83 K at $$x$$ = 0.104 while preserving the crystal structure. With increasing substitution concentration $$x$$, a semiconducting increment of $$rho$$ and $$R_{rm H}$$ is strongly suppressed and a metallic behavior is observed at $$x$$ > 0.06. Ti substitution can realize an excitonic correlated metallic state. This metallization is explained by the hole doping effect based on the band calculations. Applying pressure to the carrier doped (Ta$$_{1-x}$$Ti$$_x$$)$$_2$$NiSe$$_5$$, we found superconductivity above 2.6 GPa, which is much smaller than that of Ta$$_2$$NiSe$$_5$$ around 8 GPa. The carrier doping induced by Ti substitution favors superconductivity in this compound.

Language

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English

Journal

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Journal of the Physical Society of Japan

Volume

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94

Number

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11

Pages

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p.114703_1 - 114703_7

Publication Year/Month

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2025/10

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Paper URL

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https://doi.org/10.7566/JPSJ.94.114703

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