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Single-layer graphene oxide film grown on $$alpha$$-Al$$_{2}$$O$$_{3}$$(0001) for use as an adsorbent

圓谷 志郎*; 本田 充紀   ; 滝沢 優*; 好田 誠*

Entani, Shiro*; Honda, Mitsunori; Takizawa, Masaru*; Koda, Makoto*

Graphene oxide (GO) is expected to be one of the most promising adsorbents for metal ions, including radioactive nuclides in aqueous solutions. Large-area and single-layer graphene oxide (SLGO) grown on $$alpha$$-Al$$_{2}$$O$$_{3}$$(0001) was used as a model structure of GO since the aggregation and re-stacking of the GO sheets prevent the adequate analysis of the adsorption state. The SLGO film was obtained by oxidizing monolayer graphene grown by metal-free chemical vapor deposition on the $$alpha$$-Al$$_{2}$$O$$_{3}$$(0001) surface, and the adsorption state was determined by surface analytical techniques. It was clarified that Cs adsorbs on oxygen functional groups by substituting with H atoms from carboxyl and hydroxy groups. It is also estimated that the weight adsorption capacity of SLGO in the 1.0 mol/L-Cs aqueous solution is as much as approximately 70 wt%. It has been demonstrated that GO has great potential to be a promising adsorbent for Cs in aqueous solutions.

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