In situ study of growth mechanism of germanene segregated through Ag(111) thin films by Raman and X-ray photoelectron spectroscopy

寺澤 知潮   ; 勝部 大樹*; 矢野 雅大   ; 小澤 孝拓*; 津田 泰孝   ; 吉越 章隆 ; 朝岡 秀人  ; 鈴木 誠也   

Terasawa, Tomoo; Katsube, Daiki*; Yano, Masahiro; Ozawa, Takahiro*; Tsuda, Yasutaka; Yoshigoe, Akitaka; Asaoka, Hidehito; Suzuki, Seiya

Germanene, a honeycomb lattice of Ge atoms, has attracted attention for next-generation electronics and as a topological material. Among reported synthesis routes, the segregation method enables reproducible monolayer germanene formation on Ag(111) through simply annealing an Ag(111) thin film on a Ge(111) substrate. Despite this success, the physical origins of its monolayer selectivity and the mechanism for suppressing competing Ge phases remain unclear. Here, we investigate germanene formation via Ge segregation using in situ Raman spectroscopy and X-ray photoelectron spectroscopy to directly track Ge behavior during annealing and cooling. In situ observations revealed that annealing at 500C yielded no Ge-related byproducts, and the system reached a high-temperature surface equilibrium state, independent of the initial Ge amount. Cooling from this state produced a Ge-enriched surface that stabilizes the formation of monolayer germanene. In contrast, heating only to 300C produced three-dimensional Ge islands without Ge-enrichment, followed by Ge-Ag alloy formation upon subsequent cooling. By integrating the temperature-dependent diffusion length and the process-dependent diffusion direction, we established a unified description of Ge behavior on Ag/Ge(111) substrates, in which cooling-induced Ge-enrichment at the surface reproducibly stabilizes the selective formation of monolayer germanene.