Annealing process of defects in epitaxial SiC induced by He and electron irradiation; Positron annihilation study

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Sperr, P.*; Frank, T.*; Weidner, M.*; Pensl, G.*; Ito, Hisayoshi

no abstracts in English

Language	:	English
Journal	:	Materials Science Forum
Volume	:	353-356
Number	:
Pages	:	p.537 - 540
Publication Year/Month	:	2001/00
Meeting title	:	3rd European Conference on Silicon Carbide and Related Materials (ECSCRM-2000)
Held date	:	2000/09
Location (city)	:	Kloster Banz
Location (country)	:	Germany
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Keywords	:	炭化ケイ素(SiC); ヘリウムイオン照射; 電子線照射; 照射欠陥; アニール; 陽電子消滅; DLTS
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Registration No. : B20000493
JAEA Abstracts No. : 290559
Paper Submission No. : 18134

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