Steam annealing effects on CV characteristics of MOS structures on (110) face of 4H-SiC

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Takahashi, Kunimasa*; Kitabatake, Makoto*

no abstracts in English

Language	:	English
Journal	:	Materials Science Forum
Volume	:	353-356
Number	:
Pages	:	p.635 - 638
Publication Year/Month	:	2001/00
Meeting title	:	3rd European Conference on Silicon Carbide and Related Materials (ECSCRM-2000)
Held date	:	2000/09
Location (city)	:	Kloster Banz
Location (country)	:	Germany
Patent information	:
PDF	:
Paper URL	:
DOI for research data	:
Keywords	:	4H-SiC; Steam Annealing; Re-oxidation; MOS; CV; Inferface Frap; (110); (100)
Research Facility	:
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Registration No. : B20000862
JAEA Abstracts No. : 290409
Paper Submission No. : 18046

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