Generation and annihilation of intrinsic-related defect centers in 4H/6H-SiC

Frank, T.*; Weidner, M.*; Ito, Hisayoshi; Pensl, G.*

no abstracts in English

Language	:	English
Journal	:	Materials Science Forum
Volume	:	353-356
Number	:
Pages	:	p.439 - 442
Publication Year/Month	:	2001/00
Meeting title	:	3rd European Conference on Silicon Carbide and Related Materials (ECSCRM-2000)
Held date	:	2000/09
Location (city)	:	Kloster Banz
Location (country)	:	Germany
Patent information	:
PDF	:
Paper URL	:
DOI for research data	:
Keywords	:	炭化ケイ素(SiC); 電子線照射; イオン照射; 欠陥; DLTS; アニール
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Article of JAEA R&D Review	:
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Accesses	:	- Accesses
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Registration No. : B20001170
JAEA Abstracts No. : 300183
Paper Submission No. : 18770

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