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※ 半角英数字
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Optical-detection element, solid-state imaging device, and method for driving solid-state imaging device

武内 伴照; 土谷 邦彦

渡辺 恭志*; 田中 茂雄*

An optical-detection element includes a p-type supporting-layer, an n-type buried charge-generation region to implement a photodiode with the supporting-layer, a p-type shield region buried in the buried charge-generation region, a gate insulating-film contacted with the shield region, a transparent electrode on the gate insulating-film, a p-type well region buried in the supporting-layer, and an n+-type charge-readout region buried in the supporting-layer at an edge of the well region toward the buried charge-generation region.