Floating object removal in underwater ROV video images using segment anything model and generative image in-painting

Takahashi, Hiroki*; Kato, Toru*; Yamashita, Meguru*; Doi, Akio*; Imabuchi, Takashi

Artificial Life and Robotics, 13 Pages, 2026/00

https://doi.org/10.1007/s10015-025-01100-7

Development of a virtual 3D scanner for data augmentation in point cloud shape recognition

Takahashi, Hiroki*; Kato, Toru*; Yamashita, Meguru*; Doi, Akio*; Imabuchi, Takashi

Proceedings of 29th International Symposium on Artificial Life and Robotics (AROB 29th 2024) (Internet), p.1093 - 1096, 2024/01

Estimation of the activity median aerodynamic diameter of plutonium particles using image analysis

Takasaki, Koji; Yasumune, Takashi; Yamaguchi, Yukako; Hashimoto, Makoto; Maeda, Koji; Kato, Masato

Journal of Nuclear Science and Technology, 60(11), p.1437 - 1446, 2023/11

https://doi.org/10.1080/00223131.2023.2196969

The aerodynamic radioactive median diameter (AMAD) is necessary information to assess the internal exposure. On June 6, 2017, at a plutonium handling facility in Oarai site of Japan Atomic Energy Agency (JAEA), during the inspection work of a storage container that contains nuclear fuel materials, accidental contamination occurred and five workers inhaled radioactive materials including plutonium. Some smear papers and an air sampling filter were measured with the imaging plate, and we conservatively estimated minimum AMADs for two cases, plutonium nitrate and plutonium dioxide. As a result of AMAD estimation, even excluding a giant particle of a smear sample, the minimum AMADs of plutonium nitrate from smear papers were 4.3 - 11.3 m and those of plutonium dioxide were 5.6 - 14.1 m. Also, the minimum AMAD of plutonium nitrate from an air sampling filter was 3.0 m and that of plutonium dioxide was 3.9 m.

Sodium-cooled Fast Reactors

Ohshima, Hiroyuki; Morishita, Masaki*; Aizawa, Kosuke; Ando, Masanori; Ashida, Takashi; Chikazawa, Yoshitaka; Doda, Norihiro; Enuma, Yasuhiro; Ezure, Toshiki; Fukano, Yoshitaka; et al.

Sodium-cooled Fast Reactors; JSME Series in Thermal and Nuclear Power Generation, Vol.3, 631 Pages, 2022/07

https://shop.elsevier.com/books/sodium-cooled-fast-reactors/morishita/978-0-12-824076-2

This book is a collection of the past experience of design, construction, and operation of two reactors, the latest knowledge and technology for SFR designs, and the future prospects of SFR development in Japan. It is intended to provide the perspective and the relevant knowledge to enable readers to become more familiar with SFR technology.

Analysis of soft errors for FinFET technology based on the multiple sensitive volume model using PHITS code

Abe, Shinichiro; Sato, Tatsuhiko; Kato, Takashi*; Matsuyama, Hideya*

no journal, , 

Radiation-induced charges in semiconductor device cause temporary and non-destructive faults (the so-called soft errors) in microelectronic devices. The model which estimates charges collected in the storage node of a memory element quickly and accurately is necessary to evaluate soft error rate by simulation. In our previous study, it was found that charge collection efficiency in FinFET change with the position and the amount of deposited charge. In this study, we construct the multiple sensitive volume model to estimate collected charge for FinFET. We obtained arbitrary charge deposition events by PHITS and analyzed charge collection of these events for by 3-D TCAD simulator HyENEXSS, the simple sensitive volume model and the multiple sensitive volume model. From the comparisons of the collected charges, it is found that the accuracy of collected charge calculation is improved by considering the variations of charge collection efficiency accompanying the position and the amount of deposited charge.

Development of exposure reduction technologies by digitalization of environment and radioactive source distribution; Understanding and 3D modeling of working environmental data by using deep learning

Doi, Akio*; Yamashita, Meguru*; Takahashi, Hiroki*; Kato, Toru*; Imabuchi, Takashi; Hanari, Toshihide; Tanifuji, Yuta; Ito, Rintaro

no journal, , 

no abstracts in English

Terrestrial SER estimation method using one-time neutron irradiation testing applicable to various kinds of neutron sources

Abe, Shinichiro; Hashimoto, Masanori*; Liao, W.*; Kato, Takashi*; Asai, Hiroaki*; Shimbo, Kenichi*; Matsuyama, Hideya*; Sato, Tatsuhiko; Kobayashi, Kazutoshi*; Watanabe, Yukinobu*

no journal, , 

Single event upset (SEU) induced by secondary cosmic-ray neutrons is one of the causes of non-destructive faults (the so-called soft errors) in microelectronics. We have proposed a method to estimate the terrestrial soft error rates (SERs) based on simulation coupled with one-time neutron irradiation testing which can be applied to various kinds of neutron sources. The validity of our method has been investigated for 65-nm bulk SRAMs with the measured data using various neutron sources. This result will be reviewed on the organized session of the 67th Space Sciences and Technology Conference.

Analysis of charge collection caused by radiation in a FinFET technology

Abe, Shinichiro; Sato, Tatsuhiko; Kato, Takashi*; Matsuyama, Hideya*

no journal, , 

Radiation-induced charges in semiconductor device cause temporary and non-destructive faults (the so-called soft errors) in microelectronic devices. The model which estimates charges collected in the storage node of a memory element quickly and accurately is necessary to evaluate soft error rate by simulation. It is predicted that charge collection process in FinFET is differs from that in planar process due to differences in their structures. In this study, we perform systematic investigation of charge collection caused by radiation using 3-D TCAD simulator HyENEXSS in order to construct the charge collection model for FinFET. As a result of that investigation, it is found that temporal conduction between source node and drain node arises at few psec. It is also clarified that the temporal conduction has a major impact on charge collection process when charges deposited only near fin. Meanwhile, it is found that diffusion process is the main cause of charge collection when charges deposited in the substrate.

None

Kato, Toru*; Takahashi, Hiroki*; Yamashita, Meguru*; Doi, Akio*; Imabuchi, Takashi

no journal, , 

None

Takahashi, Hiroki*; Kato, Toru*; Yamashita, Meguru*; Doi, Akio*; Imabuchi, Takashi

no journal, ,