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Abe, Shinichiro
Kaku Deta Nyusu (Internet), (138), p.24 - 31, 2024/06
Recently, muons are applied to various kinds of research fields, and the development of muon nuclear data is considered. The model for negative muon capture reaction implemented in PHITS has been underestimate the measured data for productions of secondary light particles. We applied the surface coalescence model (SCM) to the JQMD model and implemented the effect of meson exchange current (MEC) in the excitation function. The SCM improved productions of light complex particles, and the consideration of the MEC process in the excitation function improved productions of high energy nucleons. The improved model was applied to the soft error simulation. It was found that SEU event cross sections increase about 10 
50% when the negative muon stop around the memory array.
Be and 
Al under direct muon-induced spallation in granite quartz and its implications for past high-energy cosmic ray fluxesSakurai, Hirohisa*; Kurebayashi, Yutaka*; Suzuki, Soichiro*; Horiuchi, Kazuho*; Takahashi, Yui*; Doshita, Norihiro*; Kikuchi, Satoshi*; Tokanai, Fuyuki*; Iwata, Naoyoshi*; Tajima, Yasushi*; et al.
Physical Review D, 109(10), p.102005_1 - 102005_18, 2024/05
Secular variations of galactic cosmic rays (GCRs) are inseparably associated with the galactic activities and should reflect the environments of the local galactic magnetic field, interstellar clouds, and nearby supernova remnants. The high-energy muons produced in the atmosphere by high-energy GCRs can penetrate deep underground and generate radioisotopes in the rock. As long lived radionuclides such as Be and Al have been accumulating in these rocks, concentrations of Be and Al can be used to estimate the long-term variations in high-energy muon yields, corresponding to those in the high-energy GCRs over a few million years. This study measured the production cross sections for muon induced Be and Al by irradiating positive muons with the momentum of 160 GeV/c on the synthetic silica plates and the granite core at the COMPASS experiment line in CERN SPS. In addition, it the contributions of the direct muon spallation reaction and the nuclear reactions by muon-induced particles on the production of long lived radionuclides in the rocks were clarified.
Deng, Y.*; Watanabe, Yukinobu*; Manabe, Seiya*; Liao, W.*; Hashimoto, Masanori*; Abe, Shinichiro; Tampo, Motonobu*; Miyake, Yasuhiro*
IEEE Transactions on Nuclear Science, 71(4, Part 2), p.912 - 920, 2024/04
With the miniaturization of semiconductors and the decrease in operating voltage, there is a growing interest and discussion in whether the muons in cosmic rays may be the source of single event upsets (SEUs). In the case of neutron-induced SEUs, it was reported that the irradiation side has the impact on SEU cross sections. Here, to investigate the impact of irradiation direction on muon-induced SEUs, we have measured and simulate muon-induced SEUs in 65-nm bulk SRAMs with different muon irradiation directions. It was found that the peak SEU cross section for the package side irradiation is about twice large as that for the board side irradiation. We also revealed that the difference in observed SEU cross sections between the package side and the board side irradiation is caused by differences in energy straggling due to changes in penetration depth depending on the incident direction.
Abe, Shinichiro
CROSS T&T, (76), p.39 - 43, 2024/02
Non-destructive faults (the so-called soft errors) in microelectronics caused by cosmic rays have been recognized as a serious reliability problem. To guarantee the reliability of microelectronic devices, it is necessary to evaluate the soft error rate. We have developed some technics for the soft error simulation using PHITS code. We have also developed the terrestrial SER estimation methodology based on simulation coupled with one-time neutron irradiation testing. These results will be reported as the explanatory article in the journal of CROSS T&T published by the Comprehensive Research Organization for Science and Society (CROSS).
Sato, Tatsuhiko; Iwamoto, Yosuke; Hashimoto, Shintaro; Ogawa, Tatsuhiko; Furuta, Takuya; Abe, Shinichiro; Kai, Takeshi; Matsuya, Yusuke; Matsuda, Norihiro; Hirata, Yuho; et al.
Journal of Nuclear Science and Technology, 61(1), p.127 - 135, 2024/01
Times Cited Count：8 Percentile：99.39(Nuclear Science & Technology)The Particle and Heavy Ion Transport code System (PHITS) is a general-purpose Monte Carlo radiation transport code that can simulate the behavior of most particle species with energies up to 1 TeV (per nucleon for ions). Its new version, PHITS3.31, was recently developed and released to the public. In the new version, the compatibility with high-energy nuclear data libraries and the algorithm of the track-structure modes have been improved. In this paper, we summarize the upgraded features of PHITS3.31 with respect to the physics models, utility functions, and application software introduced since the release of PHITS3.02 in 2017.
Abe, Shinichiro; Hashimoto, Masanori*; Liao, W.*; Kato, Takashi*; Asai, Hiroaki*; Shimbo, Kenichi*; Matsuyama, Hideya*; Sato, Tatsuhiko; Kobayashi, Kazutoshi*; Watanabe, Yukinobu*
IEEE Transactions on Nuclear Science, 70(8, Part 1), p.1652 - 1657, 2023/08
Times Cited Count：0 Percentile：0.01(Engineering, Electrical & Electronic)Single event upsets (SEUs) caused by neutrons is a reliability problem for microelectronic devices in the terrestrial environment. Acceleration tests using white neutron beam provide realistic soft error rates (SERs), but only a few facilities can provide white neutron beam in the world. If single-source irradiation applicable to diverse neutron source can be utilized for the evaluation of the SER in the terrestrial environment, it contributes to solve the shortage of beam time. In this study, we investigated the feasibility of the SER estimation in the terrestrial environment by any one of these measured data with the SEU cross sections obtained by PHITS simulation. It was found that the SERs estimated by our proposed method are within a factor of 2.7 of that estimated by the Weibull function. We also investigated the effect of simplification which reduce the computational cost in simulation to the SER estimation.
Abe, Shinichiro
Nihon Genshiryoku Gakkai-Shi ATOMO
, 65(5), p.326 - 330, 2023/05
Non-destructive faults (the so-called soft errors) in microelectronics caused by environmental radiation such as neutrons and muons have been recognized as a serious reliability problem. The number of microelectronics requiring high reliability increases with the growth of the information society. Therefore, it is not realistic to evaluate the soft error rate (SER) of all microelectronics by measurement. Moreover, the evaluation of SER in the pre-manufacturing stage is sometimes required. As a result, the evaluation of SER by simulation become more important. We have developed the soft error simulation method with PHITS code. We have also simulated the neutron- and muon-induced soft errors. These results will be reported in the journal of the Atomic Energy Society of Japan (AESJ) as the explanatory article.
Iwamoto, Yosuke; Yoshida, Makoto*; Meigo, Shinichiro; Yonehara, Katsuya*; Ishida, Taku*; Nakano, Keita; Abe, Shinichiro; Iwamoto, Hiroki; Spina, T.*; Ammigan, K.*; et al.
JAEA-Conf 2021-001, p.138 - 143, 2022/03
To predict the operating lifetime of materials in high-energy radiation environments at proton accelerator facilities, Monte Carlo code are used to calculate the number of displacements per atom (dpa). However, there is no experimental data in the energy region above 30 GeV. In this presentation, we introduce our experimental plan for displacement cross sections with 120-GeV protons at Fermilab Test Beam Facility. Experiments will be performed for the US fiscal year 2022. We developed the sample assembly with four wire sample of Al, Cu, Nb and W with 250-
m diameter and 4-cm length. The sample assembly will be maintained at around 4 K by using a cryocooler in a vacuum chamber. Then, changes in the electrical resistivity of samples will be obtained under 120-GeV proton irradiation. Recovery of the accumulated defects through isochronal annealing, which is related to the defect concentration in the sample, will also be measured after the cryogenic irradiation.
Liao, W.*; Ito, Kojiro*; Abe, Shinichiro; Mitsuyama, Yukio*; Hashimoto, Masanori*
IEEE Transactions on Nuclear Science, 68(6), p.1228 - 1234, 2021/06
Times Cited Count：2 Percentile：29.53(Engineering, Electrical & Electronic)Secondary cosmic-ray neutron-induced single event upset (SEU) is a cause of soft errors on micro electronic devices. Multiple cell upsets (MCUs) are particularly serious problems since it is difficult to recover MCUs. In this study, we have performed irradiation tests of neutrons on 65-nm bulk SRAM at the national metrology institute of Japan (NMIJ) in Advanced Industrial Science and Technology (AIST) and measured SEU cross sections and MCU cross sections to investigate the effect on neutrons with the energies below 10 MeV on soft errors. It was found that SEU cross sections change drastically around 6 MeV. The proportion of MCU to total events does not change very much over the wide range of neutron energy. We also analyzed the total soft error rate (SER) of SEU and MCU by folding the neutron energy-dependent cross section and the flux spectra of the terrestrial neutron at New York and Tokyo. The calculated result indicates that the SER originating from the low-energy neutrons below 10 MeV is mostly negligible in the terrestrial environment.
Ratliff, H.; Matsuda, Norihiro; Abe, Shinichiro; Miura, Takamitsu*; Furuta, Takuya; Iwamoto, Yosuke; Sato, Tatsuhiko
Nuclear Instruments and Methods in Physics Research B, 484, p.29 - 41, 2020/12
Times Cited Count：12 Percentile：83.10(Instruments & Instrumentation)Liao, W.*; Hashimoto, Masanori*; Manabe, Seiya*; Watanabe, Yukinobu*; Abe, Shinichiro; Tampo, Motonobu*; Takeshita, Soshi*; Miyake, Yasuhiro*
IEEE Transactions on Nuclear Science, 67(7), p.1566 - 1572, 2020/07
Times Cited Count：0 Percentile：0.01(Engineering, Electrical & Electronic)Muon-induced single event upset (SEU) is predicted to increase with technology scaling. The angle of incidence of terrestrial muons is not always perpendicular to the chip surface. Consequently, the impact of the angle of incidence of muons on SEUs should be evaluated. This study conducts negative muon irradiation tests on bulk SRAM and FDSOI SRAM at two angles of incidence: 0 degree (vertical) and 45 degree (tilted). The tilted incidence drifts the muon energy peak to a higher energy. Moreover, the SEU characteristics (i.e., such as the voltage dependences of the SEU cross sections and multiple cells upset patterns) between the vertical and tilted incidences are similar.
Kuroda, Junya*; Manabe, Seiya*; Watanabe, Yukinobu*; Ito, Kojiro*; Liao, W.*; Hashimoto, Masanori*; Abe, Shinichiro; Harada, Masahide; Oikawa, Kenichi; Miyake, Yasuhiro*
IEEE Transactions on Nuclear Science, 67(7), p.1599 - 1605, 2020/07
Times Cited Count：4 Percentile：43.68(Engineering, Electrical & Electronic)Soft errors induced by terrestrial radiation in semiconductor devices have been of concern from the viewpoint of their reliability. Generally, to evaluate the soft error rates (SERs), neutron irradiation tests are performed at neutron facility. We have performed SER measurement for the 65-nm bulk SRAM and the FDSOI SRAM at RCNP in Osaka University and CYRIC in Tohoku University. In this study, we performed SER measurement for the same devices at BL10 in J-PARC MLF. The increasing rate of SER by reducing the supply voltage at J-PARC BL10 is larger than those obtained at RCNP and CYRIC. From PHITS simulation, the cause of this difference can be explained by the influence of the protons generated by neutron elastic scattering with hydrogen atoms in the package resin.
Abe, Shinichiro; Sato, Tatsuhiko; Kuroda, Junya*; Manabe, Seiya*; Watanabe, Yukinobu*; Liao, W.*; Ito, Kojiro*; Hashimoto, Masanori*; Harada, Masahide; Oikawa, Kenichi; et al.
Proceedings of IEEE International Reliability Physics Symposium (IRPS 2020) (Internet), 6 Pages, 2020/04
Times Cited Count：2 Percentile：62.88(Engineering, Electrical & Electronic)Single event upsets (SEUs) caused by neutrons have been recognized as a serious reliability problem for microelectronic devices on the ground level. In our previous work, it was found that hydride placed in front of the memory chip has considerably impact on SEU cross sections because H ions generated via elastic scattering of neutrons with hydrogen atoms are only emitted in a forward direction. In this study, the effect of components neighboring transistors on neutron-induced SEUs was investigated for 65-nm bulk SRAMs by using PHITS. It was found that the shape of the SEU cross section around few MeV comes from the thickness and the position of components placed in front of transistors when that components do not contains hydrogen atoms. By considering components adjoin memory cells in the test board used in the simulation, measured data at J-PARC BL10 were reproduced well. In addition, it was found that the effect of components neighboring transistors on neutron-induced SERs does not negligible in terrestrial environment.
Hashimoto, Masanori*; Kobayashi, Kazutoshi*; Furuta, Jun*; Abe, Shinichiro; Watanabe, Yukinobu*
Integration, 69, p.161 - 179, 2019/11
Times Cited Count：11 Percentile：64.80(Computer Science, Hardware & Architecture)Soft error originating from cosmic ray is a serious concern for reliability demanding applications. Device miniaturization and lower voltage operation degrade the immunity of SRAM and flip-flops, and then soft error countermeasures will be demanded in more and more products. This paper characterizes and discusses soft error rates of SRAM and flip-flops in the terrestrial environment with the results of investigation for soft error phenomena by measurements and simulations.
Abe, Shinichiro; Liao, W.*; Manabe, Seiya*; Sato, Tatsuhiko; Hashimoto, Masanori*; Watanabe, Yukinobu*
IEEE Transactions on Nuclear Science, 66(7, Part 2 ), p.1374 - 1380, 2019/07
Times Cited Count：7 Percentile：60.64(Engineering, Electrical & Electronic)Single event upsets (SEUs) caused by secondary cosmic-ray neutrons have recognized as a serious reliability problem for microelectronic devices. Acceleration tests at neutron facilities are convenient to validate soft error rates (SERs) quickly, but some corrections caused from measurement conditions are required to derive realistic SERs at actual environment or to compare other measured data. In this study, the effect of irradiation side on neutron-induced SEU cross sections was investigated by performing neutron transport simulation using PHITS. SERs for 65-nm bulk CMOS SRAMs are estimated using the sensitive volume model. It was found from simulation that SERs for the sealant side irradiation are 30-50% larger than those for the board side irradiation. This difference comes from the difference of production yield and angular distribution of secondary H and He ions, which are the main cause of SEUs. Thus the direction of neutron irradiation should be reported when the result of acceleration tests are published. This result also indicates that SERs can be reduced by equipping device with sealant side facing downward.
Liao, W.*; Hashimoto, Masanori*; Manabe, Seiya*; Abe, Shinichiro; Watanabe, Yukinobu*
IEEE Transactions on Nuclear Science, 66(7), p.1390 - 1397, 2019/07
Times Cited Count：13 Percentile：81.51(Engineering, Electrical & Electronic)Multiple-cell upset (MCU) in static random access memory (SRAM) is a major concern in radiation effects on microelectronic devices since it can spoil error correcting codes. Neutron-induced MCUs have been characterized for terrestrial environment. On the other hand, negative muon-induced MCUs were recently reported. Neutron- and negative muon-induced MCUs are both caused by secondary ions, and hence, they are expected to have some similarity. In this paper, we compare negative muon- and neutron-induced MCUs in 65-nm bulk SRAMs at the irradiation experiments using spallation and quasi-monoenergetic neutrons and monoenergetic negative muons. The measurement results show that the dependencies of MCU event cross section on operating voltage are almost identical. The Monte Carlo simulation is conducted to investigate the deposited charge. The distributions of deposited charge obtained by the simulation are consistent with the above-mentioned experimental observations.
Manabe, Seiya*; Watanabe, Yukinobu*; Liao, W.*; Hashimoto, Masanori*; Abe, Shinichiro
IEEE Transactions on Nuclear Science, 66(7), p.1398 - 1403, 2019/07
Times Cited Count：8 Percentile：65.31(Engineering, Electrical & Electronic)Cosmic ray-induced soft errors have been recognized as a major threat for electronics used at ground level. Recently, cosmic-ray muon-induced soft errors have received much attention due to the reduction of soft error immunity on SRAMs. In the previous studies, muon-induced soft error rates (SERs) for various technology devices were predicted with only the positive muon irradiation tests and simulation. In this paper, the muon-induced SEU rates for the 65-nm bulk and UTBB-SOI SRAMs are estimated by using the experimental data of both negative and positive muons. The experimental results showed that the negative muon SEU cross sections for the bulk SRAM are significantly larger than those for the UTBB-SOI. Estimation of muon-induced SEU rates at ground level was performed using PHITS with the experimental results. The muon-induced SER on the first floor of the building was estimated to be at most 10% of the neutron-induced SER on the same floor.
Tsai, P.-E.; Iwamoto, Yosuke; Hagiwara, Masayuki*; Sato, Tatsuhiko; Ogawa, Tatsuhiko; Satoh, Daiki; Abe, Shinichiro; Ito, Masatoshi*; Watabe, Hiroshi*
Proceedings of 2017 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC 2017) (Internet), 3 Pages, 2018/11
The energy spectra of primary knock-on atoms (PKAs) are essential for radiation damage assessment in design of accelerator facilities. However up to date the experimental data are still limited, due to the poor mass resolution and the high measurement threshold energies in the conventional setup of nuclear physics experiments using solid state detectors, which are typically above a few MeV/nucleon. In this study, a novel detection system consisting of two time detectors and one dE-E energy detector is proposed and being constructed to measure the PKA spectra. The system and detector design was based on Monte Carlo simulations by using the PHITS code. The PHITS simulations show that the system is able to distinguish the PKA isotopes above 0.2-0.3 MeV/nucleon for A=2030 amu; the PKA mass identification thresholds decrease to 
0.1 MeV/nucleon for PKAs lighter than 20 amu. The detection system will be tested in the summer of 2017, and the test results will be presented at the conference.
Manabe, Seiya*; Watanabe, Yukinobu*; Liao, W.*; Hashimoto, Masanori*; Nakano, Keita*; Sato, Hikaru*; Kin, Tadahiro*; Abe, Shinichiro; Hamada, Koji*; Tampo, Motonobu*; et al.
IEEE Transactions on Nuclear Science, 65(8), p.1742 - 1749, 2018/08
Times Cited Count：9 Percentile：66.49(Engineering, Electrical & Electronic)Recently, the malfunction of microelectronics caused by secondary cosmic-ray muon is concerned as semiconductor devices become sensitive to radiation. In this study, we have performed muon irradiation testing for 65-nm ultra-thin body and thin buried oxide (UTBB-SOI) SRAMs in the Japan Proton Accelerator Research Complex (J-PARC), in order to investigate dependencies of single event upset (SEU) cross section on incident muon momentum and supply voltage. It was found that the SEU cross section by negative muon are approximately two to four times larger than those by positive muon in the momentum range from 35 MeV/c to 39 MeV/c. The supply voltage dependence of muon-induced SEU cross section was measured with the momentum of 38 MeV/c. SEU cross sections decrease with increasing supply voltage, but the decreasing of SEU cross section by negative muon is gentler than that by positive muon. Experimental data of positive and negative muon irradiation with the momentum of 38 MeV/c were analyzed by PHITS. It was clarified that the negative muon capture causes the difference between the SEU cross section by negative muon and that by positive muon.
Liao, W.*; Hashimoto, Masanori*; Manabe, Seiya*; Watanabe, Yukinobu*; Abe, Shinichiro; Nakano, Keita*; Sato, Hikaru*; Kin, Tadahiro*; Hamada, Koji*; Tampo, Motonobu*; et al.
IEEE Transactions on Nuclear Science, 65(8), p.1734 - 1741, 2018/08
Times Cited Count：15 Percentile：82.76(Engineering, Electrical & Electronic)Soft error induced by secondary cosmic-ray muon is concerned since susceptibility of semiconductor device to soft error increases with the scaling of technology. In this study, we have performed irradiation tests of muons on 65-nm bulk CMOS SRAM in the Japan Proton Accelerator Research Complex (J-PARC) and measured soft error rate (SER) to investigate mechanism of muon-induced soft errors. It was found that SER by negative muon increases above 0.5 V supply voltage, although SER by positive muon increases monotonically as the supply voltage lowers. SER by negative muon also increases with forward body bias. In addition, negative muon causes large multiple cell upset (MCU) of more than 20 bits and the ratio of MCU events to all the events is 66% at 1.2V supply voltage. These tendencies indicate that parasitic bipolar action (PBA) is highly possible to contribute to SER by negative muon. Experimental data are analyzed by PHITS. It was found that negative muon can deposit larger charge than positive muon, and such events that can deposit large charge may trigger PBA.
