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Ishida, Natsuko*; Ota, Yukihiro; Yamamoto, Yoshihisa*
New Journal of Physics (Internet), 11, p.033007_1 - 033007_15, 2009/03
Times Cited Count：1 Percentile：10.64(Physics, Multidisciplinary)We propose a scheme to generate a novel state, a multi-path cat state of light, in which 
photons are propagating in different paths. Starting with indistinguishable single-photon sources and using linear optical circuits, the target state is extracted with high fidelity. If a state preserving quantum non-demolition measurement of photon number can be incorporated into the generation scheme, the fidelity is further improved.
Suemitsu, Maki*; Yamamoto, Yoshihisa*; Togashi, Hideaki*; Enta, Yoshiharu*; Yoshigoe, Akitaka; Teraoka, Yuden
Journal of Vacuum Science and Technology B, 27(1), p.547 - 550, 2009/02
Times Cited Count：4 Percentile：29.00(Engineering, Electrical & Electronic)Initial oxidation processes of the Si(110) surface and the chemical bonding states of silicon atoms in the initial oxides have been investigated by using real-time synchrotron-radiation photoemission spectroscopy. Time evolutions of the Si
(
=1-4) components in the Si 2
spectrum indicates that the Si
component always overwhelms the Si
component during the oxidation up to one monolayer. This is in sharp contrast to the Si(001) surface where Si is always larger than Si. The dominance of the Si component is related to presence of two types of bonds on the Si(110) surface and to their possible different reactivity against insertion of oxygen atoms.
Yamamoto, Yoshihisa*; Suzuki, Yasushi*; Miyamoto, Yu*; Bantaculo, R.*; Suemitsu, Maki*; Enta, Yoshiharu*; Teraoka, Yuden; Yoshigoe, Akitaka; Asaoka, Hidehito; Yamazaki, Tatsuya
Hakumaku, Hyomen Butsuri Bunkakai, Shirikon Tekunoroji Bunkakai Kyosai Tokubetsu Kenkyukai Kenkyu Hokoku, p.207 - 210, 2009/01
The bending of Si substrate has been measured optically in the oxidation of Si(110) surface and variation of curvature for (001) and (-110) directions have been evaluated. Furthermore, time evolutions of oxygen adsorption content and its chemical bonding states have been measured by photoemission spectroscopy to discuss inisotropy of the Si(110) oxidation in comjunction with substrate curvature measurements. Oxygen adsorption content was evaluated from O1s photoemission and chemical bonding states were evaluated from Si2p photoemission. O
gas pressure was ranging from 5.0
10
Pa to 6.710 and substrate temperature was 873 K. Compressive stress was detected in the (-110) direction. In turn, stretching stress was detected. The photoemission spectroscopy indicated that a layer-by-layer oxidation was not took place. The stretching stress in the (001) direction implies that oxidation of B-bonds which have components along the (001) direction takes place.
2 surfaceYamamoto, Yoshihisa*; Togashi, Hideaki*; Kato, Atsushi*; Takahashi, Yuya*; Konno, Atsushi*; Teraoka, Yuden; Yoshigoe, Akitaka; Asaoka, Hidehito; Suemitsu, Maki*
Applied Surface Science, 254(19), p.6232 - 6234, 2008/07
Times Cited Count：4 Percentile：20.67(Chemistry, Physical)The room temperature adsorbed state of oxygen molecules on Si(110)-162 surface and the structural change after a mild annealing has been investigated by synchrotron radiation photoemission spectroscopy. As a result, despite the very small dosage of oxygen, Si
and Si components already appear in addition to Si
. This is likely to be caused by a selective adsorption of O molecules into the vicinity of already oxidized sites. After annealing, we found that binding energy of Si and Si increase and approach to their corresponding peak positions of a thermally-grown oxide, and this increase indicates relaxation of the Si-O bond length and Si-O-Si bond angle of metastable oxygen atoms.
Yamamoto, Yoshihisa*; Togashi, Hideaki*; Konno, Atsushi*; Matsumoto, Mitsutaka*; Kato, Atsushi*; Saito, Eiji*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka
Shingaku Giho, 108(80), p.65 - 70, 2008/06
The growth process of thermal oxides on Si(110) surface and the development of their interfacial bonding structures have been investigated by using real-time synchrotron radiation photoemission spectroscopy. As a result, it was clarified that the Si component in the Si 2p core-level spectra is always much higher than that of Si for 0-1 mono-layer (ML) oxides on Si(110) surface. Observations on the time-evolution of the O 1s core-level spectrum indicates that the autocatalytic-reaction model proposed for the Si(001) oxidation can be also applicable to the Si(110) oxidation.
Yamasaki, Chisato*; Murakami, Katsuhiko*; Fujii, Yasuyuki*; Sato, Yoshiharu*; Harada, Erimi*; Takeda, Junichi*; Taniya, Takayuki*; Sakate, Ryuichi*; Kikugawa, Shingo*; Shimada, Makoto*; et al.
Nucleic Acids Research, 36(Database), p.D793 - D799, 2008/01
Times Cited Count：52 Percentile：70.31(Biochemistry & Molecular Biology)Here we report the new features and improvements in our latest release of the H-Invitational Database, a comprehensive annotation resource for human genes and transcripts. H-InvDB, originally developed as an integrated database of the human transcriptome based on extensive annotation of large sets of fulllength cDNA (FLcDNA) clones, now provides annotation for 120 558 human mRNAs extracted from the International Nucleotide Sequence Databases (INSD), in addition to 54 978 human FLcDNAs, in the latest release H-InvDB. We mapped those human transcripts onto the human genome sequences (NCBI build 36.1) and determined 34 699 human gene clusters, which could define 34 057 protein-coding and 642 non-protein-coding loci; 858 transcribed loci overlapped with predicted pseudogenes.
Yamamoto, Yoshihisa*; Togashi, Hideaki*; Kato, Atsushi*; Suemitsu, Maki*; Narita, Yuzuru*; Teraoka, Yuden; Yoshigoe, Akitaka
Materials Research Society Symposium Proceedings, Vol.1074, p.36 - 40, 2008/00
In this study, we have investigated the bonding structure of ultrathin oxide films on Si(110) surface by real-time SR-PES experiments. Experiments were conducted at surface chemistry end-station settled at BL23SU in SPring-8. The oxidation temperature was 813 K and the O pressure was 1.110
Pa. As a result, we found that one of the surface core-level shifts in Si 2p spectrum, related to the 1st and the 2nd layer Si atoms, decreases rapidly, coincident with the rapid initial development of the O1s spectrum. This indicates high reactivity of the Si(110)-162 reconstructed surface with oxygen molecules.
Yoshikawa, Hiroshi; Sakaki, Hironao; Sako, Hiroyuki; Takahashi, Hiroki; Shen, G.; Kato, Yuko; Ito, Yuichi; Ikeda, Hiroshi*; Ishiyama, Tatsuya*; Tsuchiya, Hitoshi*; et al.
Proceedings of International Conference on Accelerator and Large Experimental Physics Control Systems (ICALEPCS '07) (CD-ROM), p.62 - 64, 2007/10
J-PARC is a large scale facility of the proton accelerators for the multi-purpose of scientific researches in Japan. This facility consists of three accelerators and three experimental stations. Now, J-PARC is under construction, and LINAC is operated for one year, 3GeV synchrotron has just started the commissioning in this October the 1st. The completion of this facility will be next summer. The control system of accelerators established fundamental performance for the initial commissioning. The most important requirement to the control system of this facility is to minimize the activation of accelerator devices. In this paper, we show that the performances of each layer of this control system have been achieved in the initial stage.
2 surfaces by O 1s photoemission spectroscopy using synchrotron radiationSuemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Narita, Yuzuru*; Enta, Yoshiharu*
Japanese Journal of Applied Physics, Part 1, 46(4B), p.1888 - 1890, 2007/04
Times Cited Count：12 Percentile：43.37(Physics, Applied)Initial oxidation of Si(110) surface has been investigated by using real-time X-ray photoemission spectroscopy. The time evolution of the O 1s spectrum shows occurrence of rapid oxidation just after the introduction of the oxygen molecules, which is evidenced by the considerable peak intensity corresponding to oxygen exposure of as low as 1.5L (1L=1.3310
Pa s). This initial oxide is dominated by a state with a relatively low binding energy, which is gradually replaced by a state with a relatively high binding energy with the increase of the oxygen exposure, resulting in the low-KE shift of the O 1s peak. Comparison with previously reported O 1s spectra from dry-oxidized Si(111) surface suggests oxidation at or around the adatoms of Si(110)-162 clean surface as a likely oxidation state for this low-binding-energy peak.
2Suemitsu, Maki*; Togashi, Hideaki*; Kato, Atsushi*; Takahashi, Yuya*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Asaoka, Hidehito
Materials Research Society Symposium Proceedings, Vol.996, p.19 - 25, 2007/00
From its high hole mobility, as well as its inevitable usage as an active layer in multi-gated FETs, Si(110) surface is expected to play a crucial role in the next generation CMOS devices. We have investigated the initial oxidation of Si(110) surface by using SR-XPS and STM. Reflecting its atomistic structure of the 162 reconstruction, initial oxidation of Si(110) surface shows a unique behavior which is not observed on other surfaces like (111) and (001).
Suemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Narita, Yuzuru*
Shingaku Giho, 106(108), p.61 - 63, 2006/06
no abstracts in English
2 surface by photoemission spectroscopySuemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Enta, Yoshiharu*; Narita, Yuzuru*
ECS Transactions, 3(2), p.311 - 316, 2006/00
Initial thermal oxidation of Si(110) surface has been investigated by using real-time X-ray photoemission spectroscopy with synchrotron radiation. The Si(110) initial oxidation is characterized by presence of a rapid oxidation just after the introduction of gaseous oxygen molecules. Peak separation of the O1s photoemission spectra suggests the presence of at least two distinct oxidation sites on the surface, which may reflect the complicated surface structure of the Si(110)-162 reconstruction.
; ; Fukazawa, E.*; Yamamoto, H.*; Taira, K.*; Tanaka, Toshiyuki*; Suyama, Yasuhiro*; Kondo, Y.*; ; ; et al.
PNC TJ1100 97-002, 85 Pages, 1997/03
None
oxidation of H-terminated Si(110) surfaceNakano, Takuya*; Togashi, Hideaki*; Matsumoto, Mitsutaka*; Yamamoto, Yoshihisa*; Suzuki, Yasushi*; Teraoka, Yuden; Yoshigoe, Akitaka; Suemitsu, Maki*
no journal, ,
Time evolution of oxide layers in the H-terminated Si(110) surface by the UV/O treatment at room temperature was observed by photoemission spectroscopy with synchrotron radiation. Special oxidation mechanisms for the H-terminated Si(110) surface were found. Si(110) surfaces were hydrogenated by HF treatments. The surface was irradiated and oxidized by UV light (253.7, 184.9 nm) of a low pressure Hg lamp in the air. The UV/O irradiation time dependence of oxide thickness showed a step-wise profile. The step width was about 0.2 nm. The value is close to one oxide layer thickness (0.19 nm) for the Si(110) surface. Si atoms at the Si(110) surface are categolized to A bonds which are chain-like dense bonds, and B bonds which connect up and down A bond chains. The step-wise oxidation behaviour is reasonable if oxidation at the B bonds, in which oxidation strain is smaller than that of A bonds, has larger reaction rate than at the A bonds.
Suemitsu, Maki*; Kato, Atsushi*; Togashi, Hideaki*; Konno, Atsushi*; Yamamoto, Yoshihisa*; Teraoka, Yuden; Yoshigoe, Akitaka; Narita, Yuzuru*
no journal, ,
By using real-time photoemission spectroscopy, kinetics of initial oxidation of Si(110)-162 surface has been investigated and is compared with that of Si(100) surface. Dry oxidation of Si(110) shows rapid initial oxidation just after introduction of the oxygen, which is associated with an O1s state with a weaker binding energy. As the oxidation proceeds, another O1s state with a stronger binding energy develops. The rapid initial oxidation is related to oxidation at or around the Si(111)-like Si adatoms, which are reportedly present in the 162 reconstruction of the Si(110) surface.
2 by real-time photoemission spectroscopy, 1Togashi, Hideaki*; Kato, Atsushi*; Yamamoto, Yoshihisa*; Konno, Atsushi*; Narita, Yuzuru*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka; Takahashi, Yuya*; Asaoka, Hidehito
no journal, ,
no abstracts in English
2 by real-time photoemission spectroscopy, 2Kato, Atsushi*; Togashi, Hideaki*; Yamamoto, Yoshihisa*; Konno, Atsushi*; Narita, Yuzuru*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka; Takahashi, Yuya*; Asaoka, Hidehito
no journal, ,
no abstracts in English
2 surfaceTogashi, Hideaki*; Yamamoto, Yoshihisa*; Goto, Seiichi*; Takahashi, Yuya*; Nakano, Takuya*; Kato, Atsushi*; Hasegawa, Satoshi*; Konno, Atsushi*; Suemitsu, Maki*; Asaoka, Hidehito; et al.
no journal, ,
no abstracts in English
2 surface by Si 2p photoemission spectroscopyYamamoto, Yoshihisa*; Togashi, Hideaki*; Kato, Atsushi*; Hasegawa, Satoshi*; Goto, Seiichi*; Nakano, Takuya*; Suemitsu, Maki*; Narita, Yuzuru*; Yoshigoe, Akitaka; Teraoka, Yuden
no journal, ,
Initial oxidation process of Si(110)-162 clean surface has been investigated with synchrotron radiation photoemission spectroscopy. We found that the intensity of the alpha peak, one of the surface core level shifts in the Si 2p photoemission spectra, decreased in the just early stage of oxidation. And it was possible to relate this component with the rapid initial oxidation, which was unique to Si(110) surface. According to recent studies, this component was attributed to the 1st and the 2nd Si layer. We also found that there were significant amount of Si component just after introducing the oxygen gas, which was contrast to the oxidation of Si(001) surface.
Yamamoto, Yoshihisa*; Togashi, Hideaki*; Kato, Atsushi*; Suemitsu, Maki*; Narita, Yuzuru*; Teraoka, Yuden; Yoshigoe, Akitaka
no journal, ,
Formation processes of one atomic oxide layer and time evolution of chemical bonding states at the interface were investigated by using real-time photoemission spectroscopy with synchrotron radiation. Time evolutions for oxide components (Si:n=1-4) of Si2p photoemission spectra, observed in the conditions of 813K substrate temperature and 1.110 Pa O pressure, were analyzed. Rapid increase of Si component until oxygen dose of 10 L indicates existance of a reaction path through the Si state. On the other hand, contrary to the Si(001) oxidation, the Si component was larger than the Si component during oxidation. Reaction mechanisms was considered from these facts. Oxygen insertion into chain-like Si-Si bonds densely existing on the (110) surface (A bond) and Si-Si bonds on the (-110) surface is an origin of the first layer oxidation at Si(110) surface. The A bonds may be oxidized partially due to storage of oxidation strains.
