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Iwamoto, Naoya; Onoda, Shinobu; Hishiki, Shigeomi; Oshima, Takeshi; Murakami, Makoto*; Nakano, Itsuo*; Kawano, Katsuyasu*
Materials Science Forum, 600-603(Part 2), p.1043 - 1046, 2009/00
The 6H-SiC np diodes were fabricated on a p-type substrate. To clarify the radiation resistance of the device performance, the diodes were irradiated with 1MeV-electrons at fluence up to 610/cm and the Charge Collection Efficiencies (CCEs) and diffusion length (L) of minority carriers were evaluated from the evaluation of the Transient Ion Beam Induced Current (TIBIC). The saturated CCE of 93% was obtained for non-electron irradiated diodes, and the value of CCE was kept up to electron fluences of 110/cm, although L decreased to 0.6m from 2.5m by the irradiation. The degradation of CCE was observed at fluences above 510/cm.
Onoda, Shinobu; Iwamoto, Naoya; Murakami, Makoto; Oshima, Takeshi; Hirao, Toshio; Kojima, Kazutoshi*; Kawano, Katsuyasu*; Nakano, Itsuo*
Materials Science Forum, 615-617, p.861 - 864, 2009/00
no abstracts in English
Iwamoto, Naoya; Oshima, Takeshi; Onoda, Shinobu; Hishiki, Shigeomi*; Murakami, Makoto; Nakano, Itsuo*; Kawano, Katsuyasu*
Proceedings of the 26th Symposium on Materials Science and Engineering, Research Center of Ion Beam Technology Hosei University, p.27 - 30, 2007/12
no abstracts in English
Iwamoto, Naoya; Onoda, Shinobu; Hishiki, Shigeomi; Oshima, Takeshi; Murakami, Makoto*; Nakano, Itsuo*; Kawano, Katsuyasu*
no journal, ,
no abstracts in English
Iwamoto, Naoya; Oshima, Takeshi; Onoda, Shinobu; Hishiki, Shigeomi*; Murakami, Makoto
no journal, ,
no abstracts in English