JAEA
  • help
  • PC | SP
  • JP | EN
          
Refine your search：     
Report No.
 - 
Clear All
Search Results: Records 1-8 displayed on this page of 8
  • 1

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Analysis of single-ion multiple-bit upset in high-density DRAMs

Makihara, Akiko*; Shindo, Hiroyuki*; Nemoto, Norio*; Kuboyama, Satoshi*; Matsuda, Sumio*; Oshima, Takeshi; Hirao, Toshio; Ito, Hisayoshi; Buchner, S.*; Campbell, A. B.*

IEEE Transactions on Nuclear Science, 47(6), p.2400 - 2404, 2000/12

https://doi.org/10.1109/23.903783
 Times Cited Count：33 Percentile：86.86(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Analysis of single-ion multiple-bit upset in high-density DRAMs

Makihara, Akiko*; Shindo, Hiroyuki*; Nemoto, Norio*; Kuboyama, Satoshi*; Matsuda, Sumio*; Oshima, Takeshi; Hirao, Toshio; Ito, Hisayoshi; Buchner, S.*; Campbell, A. B.*

Proceedings of 4th International Workshop on Radiation Effects on Semiconductor Devices for Space Application, p.103 - 107, 2000/00

no abstracts in English

Journal Articles

The Irradiation facilities for the radiation tolerance testing of semiconductor devices for space use in Japan

Saido, Masahiro; Fukuda, Mitsuhiro; Arakawa, Kazuo; Tajima, Satoshi; Sunaga, Hiromi; Yotsumoto, Keiichi; Kamiya, Tomihiro; Tanaka, Ryuichi; Hirao, Toshio; Nashiyama, Isamu; et al.

Proceedings of 1999 IEEE Nuclear and Space Radiation Effects Conference, p.117 - 122, 1999/00

no abstracts in English

Journal Articles

Measurement of collected charge induced by heavy ion microbeam in SOI devices

Hirao, Toshio; ; ; Nashiyama, Isamu; Matsuda, Sumio*; Nemoto, N.*; Onishi, K.*

SDM97-194, p.57 - 63, 1998/02

no abstracts in English

Journal Articles

SEU testing using cocktail ion beams

Nemoto, N.*; Shindo, Hiroyuki*; ; Kuboyama, Satoshi*; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Matsuda, Sumio*

Proceedings of 3rd International Workshop on Radiation Effects on Semiconductor Devices for Space Application, p.154 - 159, 1998/00

no abstracts in English

Journal Articles

Development of heavy-ion irradiation technique for single-event in semiconductor devices

Nemoto, Norio*; Akutsu, Takeo*; Naito, Ichiro*; Matsuda, Sumio*; Ito, Hisayoshi; Agematsu, Takashi; Kamiya, Tomihiro; Nashiyama, Isamu

JAERI-Conf 97-003, p.234 - 236, 1997/03

no abstracts in English

Journal Articles

Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Nemoto, N.*; Ito, Hisayoshi; Okumura, Hajime*; ; Yoshida, Sadafumi*; Nashiyama, Isamu

Mater. Sci. Eng., B, 47(3), p.218 - 223, 1997/00

https://doi.org/10.1016/S0921-5107(97)00034-2
 Times Cited Count：1 Percentile：11.50(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Thermal annealing effects on build-up of oxide trapped charge in $$gamma$$-ray irradiated 3C-SiC MOS structure

Nemoto, Norio*; Yoshikawa, Masahito; Nashiyama, Isamu; Yoshida, Sadafumi*; Onishi, Kazunori*

Heisei-5-Nendo (Dai-37-Kai) Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Koen Rombunshu; Zairyo, Bussei, p.149 - 150, 1993/00

no abstracts in English

8 (Records 1-8 displayed on this page)
  • 1