Work function lowering of LaB by monolayer hexagonal boron nitride coating for improved photo- and thermionic-cathodes

Yamaguchi, Hisato*; Yusa, Ryunosuke*; Wang, G.*; Pettes, M. T.*; Liu, F.*; Tsuda, Yasutaka; Yoshigoe, Akitaka; Abukawa, Tadashi*; Moody, N. A.*; Ogawa, Shuichi*

Applied Physics Letters, 122(14), p.141901_1 - 141901_7, 2023/04

https://doi.org/10.1063/5.0142591

A lowering of work function for LaB by monolayer hexagonal BN coating is reported. Photoemission electron microcopy (PEEM) and thermionic emission electron microscopy (TEEM) both revealed that the hBN coated region of a LaB(100) single crystal has lower work function compared to the bare (i.e., non-coated) and graphene coated regions. A larger decrease of work function for the hBN coated LaB(100) compared to graphene coated LaB(100) was qualitatively supported by our density functional theory (DFT) calculations. Adding an oxide layer in the calculations improved consistency between the calculation and experimental results. We followed up our calculations with synchrotron-radiation X-ray photoelectron spectroscopy (SR-XPS) and confirmed the presence of an oxide layer on our LaB.

Evaluation of doped potassium concentrations in stacked two-Layer graphene using real-time XPS

Ogawa, Shuichi*; Tsuda, Yasutaka; Sakamoto, Tetsuya*; Okigawa, Yuki*; Masuzawa, Tomoaki*; Yoshigoe, Akitaka; Abukawa, Tadashi*; Yamada, Takatoshi*

Applied Surface Science, 605, p.154748_1 - 154748_6, 2022/12

https://doi.org/10.1016/j.apsusc.2022.154748

Immersion of graphene in KOH solution improves its mobility on SiO/Si wafers. This is thought to be due to electron doping by modification with K atoms, but the K atom concentration C in the graphene has not been clarified yet. In this study, the C was determined by XPS analysis using high-brilliance synchrotron radiation. The time evolution of C was determined by real-time observation, and the C before irradiation of synchrotron radiation was estimated to be 0.94%. The C 1s spectrum shifted to the low binding energy side with the desorption of K atoms. This indicates that the electron doping concentration into graphene is decreasing, and it is experimentally confirmed that K atoms inject electrons into graphene.

Observation of chemisorbed O molecule at SiO/Si(001) interface during Si dry oxidation

Tsuda, Yasutaka; Yoshigoe, Akitaka; Ogawa, Shuichi*; Sakamoto, Tetsuya*; Takakuwa, Yuji*

e-Journal of Surface Science and Nanotechnology (Internet), 21(1), p.30 - 39, 2022/11

https://doi.org/10.1380/ejssnt.2023-005

High reactivity of HO vapor on GaN surfaces

Sumiya, Masatomo*; Sumita, Masato*; Tsuda, Yasutaka; Sakamoto, Tetsuya; Sang, L.*; Harada, Yoshitomo*; Yoshigoe, Akitaka

Science and Technology of Advanced Materials, 23(1), p.189 - 198, 2022/00

https://doi.org/10.1080/14686996.2022.2052180

GaN is an attracting material for power-electronic devices. Understanding the oxidation at GaN surface is important for improving metal-oxide-semiconductor (MOS) devices. In this study, the oxidation at GaN surfaces depending on the GaN crystal planes (+c, -c, and m-plane) was investigated by real time XPS and DFT-MD simulation. We found that HO vapor has the highest reactivity due to the spin interaction between HO and GaN surfaces. The bond length between the Ga and N on the -c GaN surface was increased by OH attacking the back side of three-fold Ga atom. The chemisorption on the m-plane was dominant. The intense reactions of oxidation and AlGaN formation for p-GaN were observed at the interface of the AlO layer deposited by ALD using HO vapor. This study suggests that an oxidant gas other than HO and O should be used to avoid unintentional oxidation during AlGaN atomi layer deposition.

Oxidation of anatase TiO(001) surface using supersonic seeded oxygen molecular beam

Katsube, Daiki*; Ono, Shinya*; Takayanagi, Shuhei*; Ojima, Shoki*; Maeda, Motoyasu*; Origuchi, Naoki*; Ogawa, Arata*; Ikeda, Natsuki*; Aoyagi, Yoshihide*; Kabutoya, Yuito*; et al.

Langmuir, 37(42), p.12313 - 12317, 2021/10

https://doi.org/10.1021/acs.langmuir.1c01752

We investigated the oxidation of oxygen vacancies at the surface of anatase TiO(001) using supersonic seeded molecular beam (SSMB) of oxygen. The oxygen vacancies at the top-surface and sub-surface could be eliminated by the supply of oxygen using an SSMB. These results indicate that the interstitial vacancies can be mostly assigned to oxygen vacancies, which can be effectively eliminated by using an oxygen SSMB. Oxygen vacancies are present on the surface of anatase TiO(001) when it is untreated before transfer to a vacuum chamber. These vacancies, which are stable in the as-grown condition, could also be effectively eliminated using the oxygen SSMB.

Interface atom mobility and charge transfer effects on CuO and CuO formation on CuPd(111) and CuPt(111)

Tsuda, Yasutaka; Gueriba, J. S.*; Makino, Takamasa*; Dio, W. A.*; Yoshigoe, Akitaka; Okada, Michio*

Scientific Reports (Internet), 11, p.3906_1 - 3906_8, 2021/02

https://doi.org/10.1038/s41598-021-82180-w

Oxidation processes of copper-gold alloy surface induced by supersonic oxygen molecular beam

Okada, Michio*; Tsuda, Yasutaka*; Yoshigoe, Akitaka; Dio, W. A.*

Do To Dogokin, 56(1), p.232 - 236, 2017/00

We reported the our studies on the surface temperature (Ts) dependence of oxidation on the CuAu(111) surface by a supersonic O molecular beam, using synchrotron radiation X-ray photoemission spectroscopy. Clean surface shows strong Au segregation to the top layer, i.e., Au surface enrichment of the clean surface. Complete Cu segregation to the surface occurs at 0.5 ML O surface coverage. The Au-rich second and third layers of the oxidized surface demonstrate the protective layer formation against oxidation deeper into the bulk. We found that CuO formation occurs. At Ts = 300K, the CuO growth is not so effective. The surface oxidation is less effective on CuAu(111) than on Cu(111). At Ts = 400K, the protection by the Au-rich layer against oxidation into bulk is effective. At Ts = 500K, the Au protective layer is broken due to effective Au diffusion and thus CuO grows deeper into bulk.

Surface temperature dependence of oxidation of CuAu(111) by an energetic oxygen molecule

Tsuda, Yasutaka*; Yoshigoe, Akitaka; Teraoka, Yuden; Okada, Michio*

Materials Research Express (Internet), 3(3), p.035014_1 - 035014_8, 2016/03

https://doi.org/10.1088/2053-1591/3/3/035014

We report a study on the surface-temperature () dependence of oxidation process at CuAu(111) by using a hyperthermal oxygen molecular beam and synchrotron-radiation X-ray photoemission spectroscopy. The O-1s spectra and the corresponding O-uptake curves demonstrate that CuO domains grow effectively at high of 400 and 500 K. The simple analysis of the O distribution suggests that the temperature-induced atomic diffusion causes the CuO domains growing thicker at 500 K. The oxidation of CuAu(111) is less efficient at = 300-500 K than that of Cu(111), demonstrating that the protective nature of CuAu against oxidation, in comparison to Cu, remains even at high .

Initial stages of CuAu(111) oxidation; Oxygen induced Cu segregation and the protective Au layer profile

Tsuda, Yasutaka*; Oka, Kohei*; Makino, Takamasa*; Okada, Michio*; Dio, W. A.*; Hashinokuchi, Michihiro*; Yoshigoe, Akitaka; Teraoka, Yuden; Kasai, Hideaki*

Physical Chemistry Chemical Physics, 16(8), p.3815 - 3822, 2014/02

https://doi.org/10.1039/c3cp54709d

Density limit in discharges with high internal inductance on JT-60U

Yamada, Hiroshi*; Takenaga, Hidenobu; Suzuki, Takahiro; Fujita, Takaaki; Takizuka, Tomonori; Kamada, Yutaka; Asakura, Nobuyuki; Tsuda, Takashi; Takechi, Manabu; Matsunaga, Go; et al.

Nuclear Fusion, 47(11), p.1418 - 1424, 2007/11

https://doi.org/10.1088/0029-5515/47/11/003

High densities exceeding the Greenwald limit by a factor of 1.7 have been obtained in discharges with high internal inductances of as high as 2.8 in JT-60U L-mode plasmas. The internal inductance, which is an index of the edge magnetic shear, is controlled by ramping down the plasma current. In addition to the extension of the operational regime, confinement performance remains as good as an H89PL factor of 1.5 even above the Greenwald limit. While the earlier work of a high study has indicated that core confinement improvement, the additional improvement of the tolerance against the high density is turned out to be correlated with high edge temperature. The normalized density when the detachment characterized by the decrease in a D signal at the divertor occurs is even higher in the case with no disruption than the case with a disruption. These comparisons have indicated that the improvement in thermal and particle transport does exist in the periphery and the edge in the high plasmas, and mitigation of the density limit is observed coincidently. Although the high discharge studied here lies outside of the usual parameter space for a steady-state operation of tokamak, demonstration of a stable discharge with good confinement beyond the Greenwald limit suggest the magnetic shear at the edge is one key parameter to uncover physical element of the operational density limit.