Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
-FeSi
film on Si(100)Yamaguchi, Kenji; Hamamoto, Satoshi*; Hojo, Kiichi
Physica Status Solidi (C), 10(12), p.1699 - 1703, 2013/12
Times Cited Count：0 Percentile：0.01(Nanoscience & Nanotechnology)Effect of substrate treatment conditions, deposition temperature and deposition rate on the crystallinity of -FeSi films formed on Si substrate was investigated. The substrates were treated with Ne
ion beams at room temperature and then annealed at 1073 K prior to film fabrication by means of ion beam sputter deposition (IBSD) method. Combinations of experimental parameters which promote the epitaxial relationship of -FeSi (100) // Si (100) were defined. Complicated dependence of these experimental parameters on the film structure indicated that careful optimization of substrate treatment conditions and deposition parameters would enable to obtain -FeSi films with excellent crystalline properties.
Hamamoto, Satoshi*; Yamaguchi, Kenji; Hojo, Kiichi
Transactions of the Materials Research Society of Japan, 38(1), p.89 - 92, 2013/03
Hamamoto, Satoshi*; Yamaguchi, Kenji; Hojo, Kiichi
Transactions of the Materials Research Society of Japan, 38(1), p.89 - 92, 2013/03
Semiconducting silicides, such as -FeSi
, BaSi and MgSi are quite attractive for their potential as optoelectronic, photovoltaic and thermoelectric materials. Authors have shown that thin, uniform and highly-oriented -FeSi films can be fabricated on Si (100) substrates with an atomically flat interface, when the substrates are pre-treated with low-energy ions. Since the use of ion beam introduces irradiation defects to the substrate and the film, semiconducting properties may be affected by such defects. Dependence of the crystalline properties of -FeSifilms on the irradiated fluence of sputter etching (SE) of the substrate was investigated to discuss whether it is possible to obtain high crystalline -FeSi thin film with very low defect concentration.
Hamamoto, Shimpei; Iigaki, Kazuhiko; Shimizu, Atsushi; Sawahata, Hiroaki; Kondo, Makoto; Oyama, Sunao; Kawano, Shuichi; Kobayashi, Shoichi; Kawamoto, Taiki; Suzuki, Hisashi; et al.
JAEA-Technology 2006-030, 58 Pages, 2006/03
JAEA-Technology-2006-030.pdf:10.69MB
During normal operation of High Temperature engineering Test Reactor (HTTR) in Japan Atomic Energy Agency (JAEA), the reactivity is controlled by the Control Rods (CRs) system which consists of 32 CRs (16 pairs) and 16 Control Rod Drive Mechanisms (CRDMs). The CR system is located in stand-pipes accompanied by the Reserved Shutdown System (RSS). In the unlikely event that the CRs fail to be inserted, the RSS is provided to insert B
C/C pellets into the core. The RSS shall be designed so that the reactor should be held subcriticality from any operation condition by dropping in the pellets. The RSS consists of BC/C pellets, hoppers which contain the pellets, electric plug, driving mechanisms, guide tubes and so on. In accidents when the CRs cannot be inserted, an electric plug is pulled out by a motor and the absorber pellets fall into the core by gravity. A trouble, malfunction of one RSS out of sixteen, occurred during a series of the pre-start up checks of HTTR on February 21, 2005. We investigated the cause of the RSS trouble and took countermeasures to prevent the issue. As the result of investigation, the cause of the trouble was attributed to the following reason: In the motor inside, The Oil of grease of the multiplying gear flowed down from a gap of the oil seal which has been deformed and was mixed with abrasion powder of brake disk. Therefore the adhesive mixture prevented a motor from rotating.
-FeSi thin filmHamamoto, Satoshi*; Yamaguchi, Kenji; Hojo, Kiichi
no journal, ,
no abstracts in English
-FeSi thin filmHamamoto, Satoru*; Yamaguchi, Kenji; Hojo, Kiichi
no journal, ,
no abstracts in English
-FeSi thin filmHamamoto, Satoshi*; Yamaguchi, Kenji; Hojo, Kiichi
no journal, ,
no abstracts in English
Hamamoto, Satoshi*; Yamaguchi, Kenji; Hojo, Kiichi
no journal, ,
no abstracts in English
-FeSi thin film using an ion beamHamamoto, Satoshi*; Yamaguchi, Kenji; Hojo, Kiichi
no journal, ,
no abstracts in English
-FeSi thin film by means of ion beam sputter deposition methodHamamoto, Satoshi*; Yamaguchi, Kenji; Hojo, Kiichi
no journal, ,
no abstracts in English
Yamaguchi, Kenji; Hamamoto, Satoshi*; Hojo, Kiichi
no journal, ,
no abstracts in English
Yamaguchi, Kenji; Hamamoto, Satoshi*; Hojo, Kiichi
no journal, ,
no abstracts in English
-FeSi thin filmHamamoto, Satoshi*; Yamaguchi, Kenji; Hojo, Kiichi
no journal, ,
no abstracts in English
