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論文

Enhanced $$d$$-$$p$$ hybridization intertwined with anomalous ground state formation in the van der Waals itinerant magnet Fe$$_5$$GeTe$$_2$$

山神 光平*; 藤澤 唯太*; Pardo-Almanza, M*; Smith, B. R. M.*; 角田 一樹; 竹田 幸治; 岡田 佳憲*

Physical Review B, 106(4), p.045137_1 - 045137_8, 2022/07

https://doi.org/10.1103/PhysRevB.106.045137
 被引用回数：2 パーセンタイル：32.25(Materials Science, Multidisciplinary)

Fe$$_5$$GeTe$$_2$$ is a van der Waals (vdW) coupled unconventional ferromagnetic metal with a high Curie temperature ($$T_{rm C}$$), exceeding 300 K. The formation of an anomalous ground state far below $$T_{rm C}$$ has attracted great interest, leading to a need to understand the spin-polarized electronic state near the Fermi energy ($$E_{rm F}$$) at low temperature. Despite recent extensive study, a microscopic understanding of the spin polarized electronic structure around $$E_{rm F}$$ has not been established yet due to the intrinsic complexity of both the crystal and band structures. In this work, we investigate the temperature dependence of element-specific soft X-ray magnetic circular dichroism (XMCD). Systematic temperature evolution in the XMCD signal from both magnetic Fe and its ligand Te is clearly observed. Importantly, the enhancement of the hybridization between Fe 3$$d$$ and Te 5$$p$$ states in the zero-magnetic field limit has been revealed. In light of the possible emergence of an exotic ground state, we discuss the temperature and magnetic field evolution of the element specific XMCD results.

論文

Evolution of Fe 3$$d$$ impurity band state as the origin of high Curie temperature in the $$p$$-type ferromagnetic semiconductor (Ga,Fe)Sb

武田 崇仁*; 坂本 祥哉*; 荒木 恒星*; 藤澤 唯太*; Anh, L. D.*; Tu, N. T.*; 竹田 幸治; 藤森 伸一; 藤森 淳*; 田中 雅明*; et al.

Physical Review B, 102(24), p.245203_1 - 245203_8, 2020/12

https://doi.org/10.1103/PhysRevB.102.245203
 被引用回数：7 パーセンタイル：43.4(Materials Science, Multidisciplinary)

(Ga$$_{1-x}$$,Fe$$_x$$)Sb is one of the promising ferromagnetic semiconductors for spintronic device applications because its Curie temperature (Tc) is above 300 K when the Fe concentration $$x$$ is equal to or higher than 0.20. However, the origin of the high Tc in (Ga,Fe)Sb remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and first-principles calculations to investigate the x dependence of the Fe 3$$d$$ states in (Ga$$_{1-x}$$,Fe$$_x$$)Sb ($$x$$ = 0.05, 0.15, and 0.25) thin films. The observed Fe 2$$p$$-3$$d$$ RPES spectra reveal that the Fe-3$$d$$ impurity band (IB) crossing the Fermi level becomes broader with increasing $$x$$, which is qualitatively consistent with the picture of double-exchange interaction. Comparison between the obtained Fe-3$$d$$ partial density of states and the first-principles calculations suggests that the Fe-3$$d$$ IB originates from the minority-spin ($$downarrow$$) $$e$$ states. The results indicate that enhancement of the double-exchange interaction between $$e_{downarrow}$$ electrons with increasing $$x$$ is the origin of the high Tc in (Ga,Fe)Sb.

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