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Song, G.*; 小林 正起*; Hwang, J. I.*; 片岡 隆*; 滝沢 優*; 藤森 淳; 大河内 拓雄; 竹田 幸治; 岡根 哲夫; 斎藤 祐児; et al.
Physical Review B, 78(3), p.033304_1 - 033304_4, 2008/07
被引用回数:8 パーセンタイル:37.3(Materials Science, Multidisciplinary)The electronic structure of the magnetic semiconductor GaCrN, and the effect of Si doping on it have been investigated by photoemission and soft X-ray absorption spectroscopy. We have confirmed that Cr in GaN is predominantly trivalent when substituting for Ga and that Cr 3 states appear within the band gap of GaN just above the N 2-derived valence-band maximum. As a result of Si doping, downward shifts of the core levels (except for Cr 2) and the formation of new states near the Fermi level were observed, which we attribute to the upward chemical-potential shift and the formation of a small amount of Cr species caused by electron doping. Possibility of Cr-rich cluster growth by Si doping are discussed based on the spectroscopic and magnetization data.
浦川 啓*; 長谷川 正幸*; 山川 純次*; 舟越 賢一*; 内海 渉
High Pressure Research, 22(2), p.491 - 494, 2002/01
被引用回数:4 パーセンタイル:34.71(Physics, Multidisciplinary)16-20GPa, 300-1350Kの圧力温度範囲における硫化鉄の相関係を放射光ビームライン設置の大容量高温高圧発生装置を用いたその場X線回折実験により決定した。Feiらによる予想とは異なり、NiAs構造の硫化鉄が少なくとも18GPaまでその安定領域を持つことがわかった。NiAs相と六方晶相の相境界が直線的であると仮定すると、この2相と液相との3重点は、39.5GPa, 2300K付近であると予想される。