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Matsunami, Noriaki*; Ito, M.*; Kato, M.*; Okayasu, Satoru; Sataka, Masao*; Kakiuchida, Hiroshi*
Nuclear Instruments and Methods in Physics Research B, 365(Part A), p.191 - 195, 2015/12
Times Cited Count:6 Percentile:45.29(Instruments & Instrumentation)We have studied ion impact effects on atomic structure in terms of X-ray diffraction (XRD), optical absorption and electrical resistivity of Mn (6%)-doped ZnO films under 100 MeV Xe ion impact at room temperature. We find the monotonic reduction of the XRD intensity to 1/50 of that of unirradiated film at 5 10
cm
, little bandgap change (
0.02 eV) and decrease of the resistivity by 4 order of magnitude. The resistivity modification has been compared with that by irradiations of low energy ions such as 100 keV Ne and N, which show more effective decrease of resistivity. We also find that temperature (T) dependence of the magnetic susceptibility (
) of Mn-doped ZnO follows the Curie law:
=
+ C/T (i.e., paramagnetic) and the Curie constant C decreases to a half of that before irradiation (C
= 0.012 emu cm
K) at 100 MeV Xe ion fluence of 10
cm
.
Matsunami, Noriaki*; Fukushima, Junichi*; Sataka, Masao; Okayasu, Satoru; Sugai, Hiroyuki; Kakiuchida, Hiroshi*
Nuclear Instruments and Methods in Physics Research B, 268(19), p.3071 - 3075, 2010/10
Times Cited Count:13 Percentile:64.87(Instruments & Instrumentation)no abstracts in English
Matsunami, Noriaki*; Sataka, Masao*; Okayasu, Satoru; Kakiuchida, Hiroshi*
Nuclear Instruments and Methods in Physics Research B, 268(19), p.3167 - 3170, 2010/10
Times Cited Count:13 Percentile:64.87(Instruments & Instrumentation)We have studied electronic- and atomic-structure modifications of polycrystalline WO films (bandgap of
3 eV) by ion irradiation. WO
films were prepared by oxidation of W films on MgO substrates and of W sheets. We find disordering or amorphization, the lattice expansion of
1.5% and bandgap increase of 0.2 eV after 90 MeV Ni ion irradiation at
3
10
cm
. A broad peak of optical absorption appears around 1.6
m by ion irradiation. We also find that the erosion yield by high-energy ions with the equilibrium charge exceeds 10
and that the erosion yield under ion impact with non-equilibrium charge (90 MeV Ni
) is
1/5 of that with the equilibrium charge (89 MeV Ni
). Effects of depth dependence of the ion mean charge on the erosion yields are discussed. The erosion yield by low-energy ions is also presented.
Matsunami, Noriaki*; Sataka, Masao; Okayasu, Satoru; Ishikawa, Norito; Tazawa, Masato*; Kakiuchida, Hiroshi*
Nuclear Instruments and Methods in Physics Research B, 266(12-13), p.2986 - 2989, 2008/06
Times Cited Count:8 Percentile:50.17(Instruments & Instrumentation)Irradiation effects of CuO irradiated with 100 MeV Xe ions were studied. X-ray diffraction intensity and optical properties were analyzed.
Matsunami, Noriaki*; Nakano, Tomohide
Proceedings of International Symposium on EcoTopia Science 2007 (ISETS '07) (CD-ROM), p.321 - 322, 2007/11
Matsunami, Noriaki*; Sataka, Masao; Okayasu, Satoru; Tazawa, Masato*
Nuclear Instruments and Methods in Physics Research B, 256(1), p.333 - 336, 2007/03
Times Cited Count:15 Percentile:70.11(Instruments & Instrumentation)no abstracts in English
Fukuoka, Osamu*; Matsunami, Noriaki*; Tazawa, Masato*; Shimura, Tetsuo*; Sataka, Masao; Sugai, Hiroyuki; Okayasu, Satoru
Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.295 - 299, 2006/09
Times Cited Count:24 Percentile:82.87(Instruments & Instrumentation)We have investigated the effects on electrical and optical properties of Al-doped ZnO (AZO) semiconductor films induced by high-energy heavy ion. The AZO films with c-axis on SiO glass substrate were prepared by a RF-sputter-deposition method at 400
C. Rutherford backscattering spectroscopy shows that the Al/Zn composition and the film thickness are 4 % and 0.3
m. No appreciable change was observed in optical transparency. We find that the conductivity monotonically increases from 1.5
10
to 8
10
S/cm with increasing the fluence up to 4
10
/cm
, as already been observed for 100 keV Ne irradiation. The fluence of 100 keV Ne at which the conductivity takes its maximum is 3
10
/cm
(7 dpa). The dpa of 100 MeV Xe at 4
10
/cm
is estimated as 0.008. Hence, the conductivity increase by 100 MeV Xe ion is ascribed to the electronic excitation effects.
Sugai, Hiroyuki; Matsunami, Noriaki*; Fukuoka, Osamu*; Sataka, Masao; Kato, Teruo; Okayasu, Satoru; Shimura, Tetsuo*; Tazawa, Masato*
Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.291 - 294, 2006/09
Times Cited Count:15 Percentile:70.33(Instruments & Instrumentation)We have investigated the effects on electrical properties of Al-doped ZnO (AZO) semiconductor films induced by high-energy heavy ion. The AZO films with c-axis on SiO glass substrate were prepared by a RF-sputter-deposition method at 400
C. Rutherford backscattering spectroscopy shows that the Al/Zn composition and the film thickness are 4 % and 0.3
m. We find that the conductivity monotonically increases from 1.5
10
to 8
10
S/cm with increasing the fluence up to 4
10
/cm
, as already been observed for 100 keV Ne irradiation. The fluence of 100 keV Ne at which the conductivity takes its maximum is 3
10
/cm
(7 dpa). The dpa of 100 MeV Xe at 4
10
/cm
is estimated as 0.008. Hence, the conductivity increase by 100 MeV Xe ion is ascribed to the electronic excitation effects.
Shinde, N.*; Matsunami, Noriaki*; Tazawa, Masato*; Sataka, Masao; Chimi, Yasuhiro
Transactions of the Materials Research Society of Japan, 31(3), p.709 - 712, 2006/09
no abstracts in English
Matsunami, Noriaki*; Fukuoka, Osamu*; Shimura, Tetsuo*; Sataka, Masao; Okayasu, Satoru
Nuclear Instruments and Methods in Physics Research B, 230(1-4), p.507 - 511, 2005/04
Times Cited Count:14 Percentile:67.89(Instruments & Instrumentation)no abstracts in English
Matsunami, Noriaki*; Ito, Masaharu*; Takai, Yoshiaki*; Tazawa, Masato*; Sataka, Masao
Nuclear Instruments and Methods in Physics Research B, 206, p.282 - 286, 2003/05
Times Cited Count:23 Percentile:80.59(Instruments & Instrumentation)no abstracts in English
Matsunami, Noriaki*; Sataka, Masao; Iwase, Akihiro; Inami, Takashi*; Kobiyama, Mamoru*
Journal of Nuclear Materials, 302(2-3), p.206 - 210, 2002/04
Times Cited Count:8 Percentile:47.73(Materials Science, Multidisciplinary)no abstracts in English
Matsunami, Noriaki*; Sataka, Masao; Iwase, Akihiro
Nuclear Instruments and Methods in Physics Research B, 193(1-4), p.830 - 834, 2002/01
Times Cited Count:27 Percentile:83.14(Instruments & Instrumentation)no abstracts in English
Matsunami, Noriaki*; Sataka, Masao; Iwase, Akihiro
Nuclear Instruments and Methods in Physics Research B, 175-177, p.56 - 61, 2001/04
Times Cited Count:8 Percentile:52.25(Instruments & Instrumentation)no abstracts in English
Matsunami, Noriaki*; Sataka, Masao; Okayasu, Satoru; Kakiuchida, Hiroshi*
no journal, ,
no abstracts in English
Nakamura, Masahiko; Matsuda, Makoto; Asozu, Takuhiro; Sataka, Masao; Takahiro, Katsumi*; Matsunami, Noriaki*
no journal, ,
We approached the HIRBS at JAEA Tokai Tandem accelerator facility. The sensitivity of the HIRBS depends on one's energy resolution, the optimization of kinematics geometry, the mass of an ion beam and a target, and so on. The beam species was Ne which expected to offer better mass resolution for target mass around 70 amu. In kinematics, higher energy ion beam provides higher energy resolution, but nuclear reactions will occur in too high energy region.
Ne beam was accelerated by Tandem accelerator up to 1.25 MeV/u. Targets ware a thin Au foil (1 nm) and Cu foil (10 nm) deposited on crystal Si substrate, GaAs single crystal and Ge single crystal. Ion detector was a typical Silicon detector with a 3.2 mm
aperture. The scattering angle was decided from typical RBS set-up as reference. We confirmed that the high energy HIRBS has enough mass resolution to analyze heavy elements in materials with a typical solid state detector, but not high resolution detection system.
Matsunami, Noriaki*; Teramoto, Tsutomu*; Sakuma, Yasuhiro*; Okayasu, Satoru; Sataka, Masao
no journal, ,
no abstracts in English
Nakamura, Masahiko; Matsuda, Makoto; Sataka, Masao; Takahiro, Katsumi*; Matsunami, Noriaki*
no journal, ,
no abstracts in English
Matsunami, Noriaki*; Fukushima, Jun*; Sataka, Masao; Okayasu, Satoru; Sugai, Hiroyuki; Kakiuchida, Hiroshi*
no journal, ,
no abstracts in English
Matsunami, Noriaki*; Sakuma, Yasuhiro*; Sataka, Masao; Okayasu, Satoru; Kakiuchida, Hiroshi*
no journal, ,
no abstracts in English