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Matsuura, Hideharu*; Minohara, Nobumasa*; Oshima, Takeshi
Journal of Applied Physics, 104(4), p.043702_1 - 043702_6, 2008/08
Times Cited Count:13 Percentile:46.81(Physics, Applied)The hole concentration in Al-doped -type 4-SiC irradiated with electrons at 200 keV was investigated. By the irradiation at 200 keV electrons, only substitutional Carbon atoms (C) in SiC can be displaced. The reduction in hole concentration due to the electron irradiation was found to be mainly due to a decrease in Al acceptor concentration and not due to an increase in defect concentration. Based on the analysis of temperature dependence of hole concentration, two types of acceptor levels were detected and the density and energy level of each acceptor were determined.
Matsuura, Hideharu*; Izawa, Keisuke*; Minohara, Nobumasa*; Oshima, Takeshi
Japanese Journal of Applied Physics, 47(7), p.5355 - 5357, 2008/07
Times Cited Count:2 Percentile:9.76(Physics, Applied)The reduction in hole concentration () in Al-implanted -type 6H-SiC due to 1 MeV electron irradiation was studied. By analysis of , the acceptor density (), its ionizing energy () and nature of the acceptor are determined. As a result, the acceptor observed in this study is assigned to an Al acceptor. is independent of irradiation fluence (), in spite that is strongly dependent on . We derived an analytical expression for the fluence dependence of and we estimated the removal coefficient (i.e., removal cross-section) of to be 6.410 cm for 1 MeV electron irradiation. The reduction in p due to electron irradiation is found to be mainly due to the decrease in , not to the increase in the density of defects with deep-level, because the decrease in is much larger than the increment in the density of deep-level defects.
Matsuura, Hideharu*; Minohara, Nobumasa*; Inagawa, Yusuke*; Takahashi, Miyuki*; Oshima, Takeshi; Ito, Hisayoshi
Materials Science Forum, 556-557, p.379 - 382, 2007/00
no abstracts in English
Matsuura, Hideharu*; Minohara, Nobumasa*; Takahashi, Miyuki*; Oshima, Takeshi; Ito, Hisayoshi
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.181 - 184, 2006/10
no abstracts in English
Nishino, Kozo*; Minohara, Nobumasa*; Matsuura, Hideharu*; Oshima, Takeshi
no journal, ,
no abstracts in English
Matsuura, Hideharu*; Minohara, Nobumasa*; Inagawa, Yusuke*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi
no journal, ,
no abstracts in English
Matsuura, Hideharu*; Minohara, Nobumasa*; Onoda, Shinobu; Oshima, Takeshi
no journal, ,
no abstracts in English