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Muroga, Masataka*; Suzuki, Hirokazu*; Udono, Haruhiko*; Kikuma, Isao*; Zhuravlev, A. V.; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Terai, Takayuki*
Thin Solid Films, 515(22), p.8197 - 8200, 2007/08
Times Cited Count:6 Percentile:31.20(Materials Science, Multidisciplinary)Semiconducting -FeSi
has received much attention as a material for Si-based optoelectronic devices. There are a number of studies on heteroepitaxy of
-FeSi
film on Si. However, growth experiments of
-FeSi
film on single crystalline
-FeSi
substrate have not been investigated yet. Recently, single crystalline
-FeSi
with large growth facets by solution growth method using Ga solvent. By obtaining a smooth surface on the substrate, we have succeeded in growing
-FeSi
film on
-FeSi
(110) substrate using molecular-beam epitaxy.
Ouchi, Shinji*; Muroga, Masataka*; Udono, Haruhiko*; Yamada, Yoichi; Yamamoto, Hiroyuki; Kikuma, Isao*
no journal, ,
Thermal preannealing of single crystalline -FeSi
substrate for MBE has been investigated to obtain better substrate for homo-epitaxial growth of
-FeSi
film.
Wakaya, Ippei*; Muroga, Masataka*; Ouchi, Shinji*; Udono, Haruhiko*; Yamada, Yoichi; Yamamoto, Hiroyuki; Kikuma, Isao*
no journal, ,
RHEED observation of surface has been performed on -FeSi
single crystals.