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高橋 正光; 神津 美和*; 佐々木 拓生
Japanese Journal of Applied Physics, 55(4S), p.04EJ04_1 - 04EJ04_4, 2016/04
被引用回数：5 パーセンタイル：24.79(Physics, Applied)The polytypism of GaAs nanowires was investigated by in situ X-ray diffraction using a molecular-beam eppitaxy chamber combined with an X-ray diffractometer. The growth of nanowries was found to start with the formation of zincblende structure, followed by the growth of the wurtzite structure. The wurtzite structure tended to form at a low growth temperature and a high growth rate.
synchrotron X-ray diffraction佐々木 拓生; 石川 史太郎*; 高橋 正光
Applied Physics Letters, 108(1), p.012102_1 - 012102_5, 2016/01
被引用回数：4 パーセンタイル：14.94(Physics, Applied)We report an anomalous lattice deformation of GaN layers grown on SiC(0001) by molecular beam epitaxy. The evolution of the lattice parameters during the growth of the GaN layers was measured by in situ synchrotron X-ray diffraction. The lattice parameters in the directions parallel and normal to the surface showed significant deviation from the elastic strains expected for lattice-mismatched films on substrates up to a thickness of 10 nm. The observed lattice deformation was well explained by the incorporation of hydrostatic strains due to point defects. The results indicate that the control of point defects in the initial stage of growth is important for fabricating GaN-based optoelectronic devices.
X-ray diffraction下村 憲一*; 鈴木 秀俊*; 佐々木 拓生; 高橋 正光; 大下 祥雄*; 神谷 格*
Journal of Applied Physics, 118(18), p.185303_1 - 185303_7, 2015/11
被引用回数：9 パーセンタイル：38.07(Physics, Applied)Direct measurements on the growth of InAs quantum dots (QDs) and various cap layers during molecular beam epitaxy are performed by X-ray diffraction (XRD). The evolution of strain induced both in the QDs and cap layers during capping is discussed based on the XRD intensity transients obtained at various lattice constants. Transients with different features are observed from those obtained during InGaAs and GaAs capping, attributed to In-Ga intermixing between the QDs and the cap layer. Photoluminescence wavelength can be tuned by controlling the intermixing and the cap layer thickness. It is demonstrated that such information about strain is useful for designing and preparing novel device structures.
高橋 正光; 神津 美和*; 佐々木 拓生; Hu, W.*
Crystal Growth & Design, 15(10), p.4979 - 4985, 2015/10
被引用回数：14 パーセンタイル：69.21(Chemistry, Multidisciplinary)The evolution of polytypism during GaAs nanowire growth was investigated by in situ X-ray diffraction. The growth of nanowires was found to start with the formation of zincblende structure, followed by the growth of wurtzite structure. The growth process was well reproduced by a simulation based on a layer-by-layer nucleation mode. The good agreement between the measured and simulated results confirms that nucleation costs higher energy for the stackings changing the crystal structure than for those conserving the preceding structure. The transition in prevalent structure can be accounted for by the change of local growth conditions related to the shape of triple phase line rather than by the change in supersaturation level, which quickly reaches equilibrium after starting growth.
佐々木 拓生; 高橋 正光
日本結晶成長学会誌, 42(3), p.210 - 217, 2015/10
Dislocation-mediated strain relaxation during lattice-mismatched InGaAs/GaAs(001) heteroepitaxy was studied through in situ X-ray reciprocal space mapping ( RSM). At the synchrotron facility SPring-8, a hybrid system of molecular beam epitaxy and X-ray diffractometry with a two-dimensional detector enabled us to perform RSM at high-speed and high-resolution. Using this experimental setup, the strain relaxation processes were classified into four thickness ranges with different dislocation behavior. In order to discuss this observation quantitatively, a strain relaxation model was proposed based on the Dodson-Tsao's kinetic model, and its validity was demonstrated by good agreement with the experimental residual strain. In addition to the single InGaAs layer, strain relaxation processes in multi-layer structures are discussed.
three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBE佐々木 拓生; 高橋 正光; 鈴木 秀俊*; 大下 祥雄*; 山口 真史*
Journal of Crystal Growth, 425, p.13 - 15, 2015/09
被引用回数：4 パーセンタイル：29.54(Crystallography) three-dimensional X-ray reciprocal space mapping (
3D-RSM) was employed for studying molecular beam epitaxial (MBE) growth of InGaAs multilayer structures on GaAs(001). Measuring the symmetric 004 diffraction allowed us to separately obtain film properties of individual layers and to track the real-time evolution of both residual strain and lattice tilting. In two- layer growth of InGaAs, significant plastic relaxation was observed during the upper layer growth, and its critical thickness was experimentally determined. At the same thickness, it was found that the direction of lattice tilting drastically changed. We discuss these features based on the Dunstan model and confirm that strain relaxation in the multilayer structure is induced by two kinds of dislocation motion (dislocation multiplication and the generation of dislocation half-loops).
Biermanns, A.*; Dimakis, E.*; Davydok, A.*; 佐々木 拓生; Geelhaar, L.*; 高橋 正光; Pietsch, U.*
Nano Letters, 14(12), p.6878 - 6883, 2014/12
被引用回数：27 パーセンタイル：72.71(Chemistry, Multidisciplinary)The dynamic relation between the growth conditions and the structural composition of the catalyst-free InAs nanowires was investigated using time-resolved X-ray scattering and diffraction measurements during the growth by molecular beam epitaxy. A spontaneous build-up of liquid indium is directly observed in the beginning of the growth process and associated with the simultaneous nucleation of InAs nanowires predominantly in the wurtzite phase. After their nucleation, the nanowires grow in the absence of liquid indium, and with a highly defective wurtzite structure. A pathway to pure wurtzite nanowires is presented through this work.
佐々木 拓生; Norman, A. G.*; Romero, M. J.*; Al-Jassim, M. M.*; 高橋 正光; 小島 信晃*; 大下 祥雄*; 山口 真史*
Physica Status Solidi (C), 10(11), p.1640 - 1643, 2013/11
被引用回数：4 パーセンタイル：83.55(Physics, Applied)Defect characterization in compositionally step graded In
Ga
As layers with different thickness of the overshooting (OS) layer was performed using cathodoluminescence (CL) and transmission electron microscopy (TEM). We found that the type and in-plane distribution of defects generated in the top InGaAs layer grown on step graded layers strongly depend on the thickness of the OS layer. In the thin OS layer, a high density of threading dislocations aligned along [110] was observed. In the thick OS layer, significant line defects associating composition variation were dominantly present. These features on defect type and distribution would relate to strain and configuration of the OS layer.
西 俊明*; 佐々木 拓生; 池田 和磨*; 鈴木 秀俊*; 高橋 正光; 下村 憲一*; 小島 信晃*; 大下 祥雄*; 山口 真史*
AIP Conference Proceedings 1556, p.14 - 17, 2013/09
被引用回数：0 パーセンタイル：0.01(Energy & Fuels) X-ray reciprocal space mapping during InGaAs/GaAs(001) MBE growth is performed to investigate effects of substrate misorientations on crystallographic tilting. It was found that evolution of the crystallographic tilt for the InGaAs films is strongly dependent on both layer structures and substrate misorientations. We discuss these observations in terms of an asymmetric distribution of dislocations.
Hu, W.; 鈴木 秀俊*; 佐々木 拓生*; 神津 美和*; 高橋 正光
Journal of Applied Crystallography, 45(5), p.1046 - 1053, 2012/10
被引用回数：12 パーセンタイル：72.05(Chemistry, Multidisciplinary)This paper describes the development of a high-speed three-dimensional reciprocal-space mapping method designed for the real-time monitoring of the strain relaxation process during the growth of heterostructure semiconductors. Each three-dimensional map is obtained by combining a set of consecutive images, which are captured during the continuous rotation of the sample, and calculating the reciprocal-space coordinates from the detector coordinate system. Using this method, the strain relaxation process of InGaAs heteroepitaxial films grown on GaAs(001) has been investigated.
佐々木 拓生*; 下村 憲一*; 鈴木 秀俊*; 高橋 正光; 神谷 格*; 大下 祥雄*; 山口 真史*
Japanese Journal of Applied Physics, 51(2), p.02BP01_1 - 02BP01_3, 2012/02
被引用回数：2 パーセンタイル：8.93(Physics, Applied)In-plane asymmetric strain relaxation in lattice-mismatched InGaAs/GaAs(001) heteroepitaxy is studied by three-dimensional X-ray reciprocal space mapping. Repeating crystal growth and growth interruptions during measurements allows us to investigate whether the strain relaxation is limited at a certain thickness or saturated. We find that the degree of relaxation during growth interruption depends on both the film thickness and the in-plane directions. Significant lattice relaxation is observed in rapid relaxation regimes during interruption. This is a clear indication that relaxation is kinetically limited. In addition, relaxation along the [110] direction can saturate more readily than that along the [
10] direction. We discuss this result in terms of the interaction between orthogonally aligned dislocations.
佐々木 拓生*; 鈴木 秀俊*; 稲垣 充*; 池田 和磨*; 下村 憲一*; 高橋 正光; 神津 美和*; Hu, W.; 神谷 格*; 大下 祥雄*; et al.
IEEE Journal of Photovoltaics, 2(1), p.35 - 40, 2012/01
被引用回数：5 パーセンタイル：22.57(Energy & Fuels)Compositionally step-graded InGaAs/GaAs(001) buffers with overshooting (OS) layers were evaluated by several characterization techniques for higher efficiency metamorphic III-V multijunction solar cells. By high-resolution X-ray diffraction, we found that fully relaxed or tensile strained top layers can be obtained by choosing appropriate OS layer thickness. Moreover, from real-time structural analysis using X-ray reciprocal space mapping ( RSM), it was proved that the top layer is almost strained to the OS layers, and it is independent of the thicknesses of the OS layers. Dislocations in the vicinity of the OS layers were observed by transmission electron microscopy, and the validity of results of RSM was confirmed from the viewpoint of misfit dislocation behavior. Finally, by photoluminescence measurements, we showed that tensile strained top layers may be suitable for the improvement of minority-carrier lifetime.
佐々木 拓生*; 鈴木 秀俊*; 高橋 正光; 大下 祥雄*; 神谷 格*; 山口 真史*
Journal of Applied Physics, 110(11), p.113502_1 - 113502_7, 2011/12
被引用回数：12 パーセンタイル：46.71(Physics, Applied)Dislocation-mediated strain relaxation during lattice-mismatched InGaAs/GaAs(001) heteroepitaxy was studied through X-ray reciprocal space mapping. At the synchrotron radiation facility SPring-8, a hybrid system of molecular beam epitaxy and X-ray diffractometry with a two-dimensional detector enabled us to perform reciprocal space mapping at high-speed and high-resolution. Using this experimental setup, the lattice constants, the diffraction broadenings along in-plane and out-of-plane directions, and the diffuse scattering were investigated. The strain relaxation processes were classified into four thickness ranges with different dislocation behavior. In addition, the existence of transition regimes between the thickness ranges was identified.
佐々木 拓生*; 鈴木 秀俊*; 崔 炳久*; 高橋 正光; 藤川 誠司; 神谷 格*; 大下 祥雄*; 山口 真史*
Journal of Crystal Growth, 323(1), p.13 - 16, 2011/05
被引用回数：20 パーセンタイル：82.16(Crystallography)In
Ga
As/GaAs(001)の分子線エピタキシャル成長中のひずみ緩和の様子をその場X線逆格子マッピングにより解析した。成長温度420, 445, 477
Cにおける残留ひずみ・結晶性の変化の様子が測定された。Dodson-Tsaoの運動学的モデルは、実験による残留ひずみの測定結果とよく一致することがわかった。さらにひずみ緩和過程における転位の運動の温度依存性の解析から、転位の運動の熱励起を議論することが可能になった。
Elfiky, D.*; 山口 真史*; 佐々木 拓生*; 高本 達也*; 森岡 千晴*; 今泉 充*; 大島 武; 佐藤 真一郎; Elnawawy, M.*; Eldesoky, T.*; et al.
Japanese Journal of Applied Physics, 49(12), p.121201_1 - 121201_7, 2010/12
被引用回数：12 パーセンタイル：45.82(Physics, Applied)宇宙用三接合太陽電池の耐放射線性強化技術開発の一環として、InGaP/GaAs/Ge太陽電池におけるInGaPサブセルのベース層キャリア濃度と耐放射線性の関係について調べた。発生キャリアの拡散長やベース層キャリア濃度をパラメータとしたシミュレーション解析を行った結果、低キャリア濃度のInGaPセルの方がより耐放射線性が高いことが導かれ、高崎量子応用研究所TIARAで行った陽子線照射実験の結果をよく再現することができた。また、低エネルギー(30keV)陽子線照射による少数キャリア拡散長の損傷係数及びキャリア枯渇係数は初期キャリア濃度には依存しなかったことから、耐放射線性の違いは発生電荷の収集を担う空乏層の長さや電界強度の影響、不純物に関連する複合欠陥に起因しているという可能性が示唆された。
Elfiky, D.*; 山口 真史*; 佐々木 拓生*; 高本 達也*; 森岡 千晴*; 今泉 充*; 大島 武; 佐藤 真一郎; Elnawawy, M.*; Eldesoky, T.*; et al.
Japanese Journal of Applied Physics, 49(12), p.121202_1 - 121202_5, 2010/12
被引用回数：7 パーセンタイル：31.03(Physics, Applied)宇宙用三接合太陽電池のミドルセルであるGaAsサブセルの耐性強化研究の一環として、高崎量子応用研究所TIARAにおいてGaAs太陽電池の200keV陽子線照射実験を行い、ベース層キャリア濃度が低い方が耐放射線性が高くなるということを明らかにした。また、放射再結合寿命と少数キャリア寿命の損傷係数をパラメータとするGaAs太陽電池の放射線照射劣化モデルを構築し、ベース層キャリア濃度の異なるGaAs太陽電池の耐放射線性がどのように変化するかを数値解析した。その結果、TIARAにおける実験結果をよく再現でき、今回構築した劣化モデルの妥当性を示すことができた。
鈴木 秀俊*; 佐々木 拓生*; 崔 炳久*; 大下 祥雄*; 神谷 格*; 山口 真史*; 高橋 正光; 藤川 誠司
Applied Physics Letters, 97(4), p.041906_1 - 041906_3, 2010/07
被引用回数：32 パーセンタイル：75.03(Physics, Applied)Real-time three-dimensional reciprocal space mapping measurement during InGaAs/GaAs(001) molecular beam epitaxial growth has been performed to investigate anisotropy in relaxation processes. Anisotropies, strain relaxation, and crystal quality in [110] and [1
0] directions were simultaneously evaluated via the position and broadness of 022 diffraction. In the small-thickness region, strain relaxation caused by 
-dislocations is higher than that caused by 
-dislocations, and therefore crystal quality along [110] is worse than that along [10]. Rapid relaxation along both [110] and [10] directions occurs at almost the same thickness. After rapid relaxation, anisotropy in strain relaxation gradually decreases, whereas crystal quality along [10] direction, presumably due to -dislocations, becomes better that along [110] direction and the ratio does not decay with thickness.
Elfiky, D.*; 山口 真史*; 佐々木 拓生*; 高本 達也*; 森岡 千晴*; 今泉 充*; 大島 武; 佐藤 真一郎; Elnawawy, M.*; Eldesuky, T.*; et al.
Proceedings of 35th IEEE Photovoltaic Specialists Conference (PVSC-35) (CD-ROM), p.002528 - 002532, 2010/06
被引用回数：6 パーセンタイル：87.7(Energy & Fuels)Ge基板上に作成したGaAs太陽電池にさまざまなエネルギーの陽子線を照射し、発電特性の劣化を調べるとともに、放射線損傷の陽子線エネルギー依存性をデバイスシミュレータを用いて検討した。その結果、開放電圧の劣化は50keVの陽子線照射で最も大きく、9.5MeVで最も小さいことが明らかとなった。デバイスシミュレータによる解析の結果、太陽電池の損傷領域が陽子線のエネルギーによって異なり、低エネルギーでは太陽電池のpn接合付近に大きな損傷を形成するために劣化も大きくなるということがわかった。
佐々木 拓生*; 鈴木 秀俊*; 崔 炳久*; 高橋 正光; 藤川 誠司; 大下 祥雄*; 山口 真史*
Materials Research Society Symposium Proceedings, Vol.1268, 6 Pages, 2010/05
被引用回数：0 パーセンタイル：0.01(Materials Science, Multidisciplinary)The in situ X-ray reciprocal space mapping (in situ RSM) of symmetric diffraction measurements during lattice-mismatched InGaAs/GaAs(001) growth were performed to investigate the strain relaxation mechanisms. The evolution of the residual strain and crystal quality were obtained as a function of InGaAs film thickness. Based on the results, the correlation between the strain relaxation and the dislocations during the film growth were evaluated. As a result, film thickness ranges with different relaxation mechanisms were classified, and dominant dislocation behavior in each phase were deduced. From the data obtained in in situ measurements, the quantitative strain relaxation models were proposed based on a dislocation kinetic model developed by Dodson and Tsao. Good agreement between the in situ data and the model ensured the validity of the dominant dislocation behavior deduced from the present study.
奥地 拓生*; 佐々木 重雄*; 長壁 豊隆; 大野 祥希*; 小竹 翔子*; 鍵 裕之*
Journal of Physics; Conference Series, 215, p.012188_1 - 012188_9, 2010/03
被引用回数：5 パーセンタイル：85.19(Instruments & Instrumentation)中性子散乱やNMRなどの微弱な信号を検出する実験手法において利用可能な圧力領域を拡大するために、小型高圧力セルの試料容積を拡大する必要がある。われわれは、対向アンビル式小型高圧力セルのアンビル材として、大型多結晶ナノダイヤ(NPD)を準備した。NPDは、単結晶ダイヤに比べて硬度が高く、大型で、強いため、高い荷重をかけることができる。われわれは、サポート式NPDアンビルと非サポート式NPDアンビルの2種類のアンビルを製作し、2種類のコンパクトな高圧力セルを用いて加圧テストを行った。その結果、0.1mm
以上の試料体積に対して14GPaの圧力発生を確認した。この結果は、NPDが大型アンビルとして非常に有望であることを示したものである。
