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三輪 周平; 唐澤 英年; 中島 邦久; 木野 千晶*; 鈴木 恵理子; 井元 純平
JAEA-Data/Code 2021-022, 32 Pages, 2023/01
JAEA-Data-Code-2021-022.pdf:1.41MBJAEA-Data-Code-2021-022(errata).pdf:0.17MB
東京電力福島第一原子力発電所の原子炉内におけるセシウム分布のより正確な予測に向けて、核分裂生成物の化学挙動データベースECUMEに格納されているステンレス鋼へのセシウム化学吸着モデルをシビアアクシデント解析コードSAMPSONに組み込んだ。改良モデルを組み込んだSAMPSONにより、当該モデルを構築した実験の結果を再現し、コードに誤りが無いことを確認した。また、SAMPSONに組み込まれた改良モデルのセシウム化学着挙動解析への有効性を確認するため、温度勾配管を有する装置を用いた実験の解析を実施した。改良モデルを組み込んだSAMPSONにより、実験の結果を再現し、SAMPSONにおけるノードジャンクションの設定方法、エアロゾル生成モデル、CsOH蒸気の飽和蒸気圧等の計算方法等の解析方法、そして改良モデルがセシウム化学吸着挙動解析に適用可能であることを確認した。また、セシウムがシビアアクシデント後に水相を介して移行したことから、原子炉内におけるセシウム分布を予測するためには、セシウム沈着物の水への溶解性の評価が前提となる。このため、ステンレス鋼へのセシウム化学吸着生成物の水への溶解性を調べた。ステンレス鋼304へのセシウム化学吸着生成物は、873Kから973Kで水溶性の高いCsFeO
、973Kから1273Kで水溶性の低いCsFeSiO
、1073Kから1273Kで水溶性の低いCsSiO
であることが分かった。これらの結果から、セシウム化学吸着量に影響を与える原子炉内温度やCsOH蒸気種濃度のようなシビアアクシデント解析条件に応じて、セシウム化学吸着生成物の水への溶解性を予測できる可能性を得た。
He neutron spin filter at J-PARC奥平 琢也; 奥 隆之; 猪野 隆*; 林田 洋寿*; 吉良 弘*; 酒井 健二; 廣井 孝介; 高橋 慎吾*; 相澤 一也; 遠藤 仁*; et al.
Nuclear Instruments and Methods in Physics Research A, 977, p.164301_1 - 164301_8, 2020/10
被引用回数：10 パーセンタイル：79.13(Instruments & Instrumentation)We are developing a neutron polarizer with polarized He gas, referred to as a He spin filter, based on the Spin Exchange Optical Pumping (SEOP) for polarized neutron scattering experiments at Materials and Life Science Experimental Facility (MLF) of Japan Proton Accelerator Research Complex (J-PARC). A He gas-filling station was constructed at J-PARC, and several He cells with long spin relaxation times have been fabricated using the gas-filling station. A laboratory has been prepared in the MLF beam hall for polarizing He cells, and compact pumping systems with laser powers of 30 W and 110 W, which can be installed onto a neutron beamline, have been developed. A He polarization of 85% was achieved at a neutron beamline by using the pumping system with the 110 W laser. Recently, the first user experiment utilizing the He spin filter was conducted, and there have been several more since then. The development and utilization of He spin filters at MLF of J-PARC are reported.
三輪 周平; 中島 邦久; 宮原 直哉; 西岡 俊一郎; 鈴木 恵理子; 堀口 直樹; Liu, J.; Miradji, F.; 井元 純平; Afiqa, B. M.; et al.
Mechanical Engineering Journal (Internet), 7(3), p.19-00537_1 - 19-00537_11, 2020/06
軽水炉シビアアクシデントのための核分裂生成物(FP)化学挙動データベースECUMEを構築した。現状のECUMEには、セシウム(Cs)-ヨウ素(I)-ホウ素(B)-モリブデン(Mo)-酸素(O)-水素(H)系の気相化学反応計算のための化学反応とその速度定数のデータセット、炉内構造材であるステンレス鋼とCs蒸気種との高温化学反応モデル、これらの化学反応で重要となるCsBO、CsSiO及びCsFeSiOの熱力学データが収納されている。これらのECUMEを用いることにより、特に福島第一原子力発電所事故におけるCs分布で重要となるBWR制御材Bやステンレス鋼の化学的な影響を実態に即した条件により評価でき、炉内のCs分布の予測が可能となる。
三輪 周平; 宮原 直哉; 中島 邦久; 西岡 俊一郎; 鈴木 恵理子; 堀口 直樹; Liu, J.; Miradji, F.; 井元 純平; Afiqa, B. M.; et al.
Proceedings of 27th International Conference on Nuclear Engineering (ICONE-27) (Internet), 8 Pages, 2019/05
軽水炉シビアアクシデントのための核分裂生成物(FP)化学挙動データベースECUMEの初版を構築した。ECUMEの初版には、セシウム(Cs)-ヨウ素(I)-ホウ素(B)-モリブデン(Mo)-酸素(O)-水素(H)系の気相化学反応計算のための化学反応とその速度定数のデータセット、ステンレス鋼とCs蒸気種との高温化学反応モデル、CsBO、CsSiO及びCsFeSiOの熱力学データが収納されている。これらのECUMEを用いることにより、特に福島第一原子力発電所事故におけるCs分布で重要となるBWR制御材Bやステンレス鋼の化学的な影響を評価でき、炉内のCs分布をより正確に予測することが可能となる。
中島 健次; 川北 至信; 伊藤 晋一*; 阿部 淳*; 相澤 一也; 青木 裕之; 遠藤 仁*; 藤田 全基*; 舟越 賢一*; Gong, W.*; et al.
Quantum Beam Science (Internet), 1(3), p.9_1 - 9_59, 2017/12
J-PARC物質・生命科学実験施設の中性子実験装置についてのレビューである。物質・生命科学実験施設には23の中性子ビームポートがあり21台の装置が設置されている。それらは、J-PARCの高性能な中性子源と最新の技術を組み合わせた世界屈指の実験装置群である。このレビューでは、装置性能や典型的な成果等について概観する。
鈴木 秀俊*; 仲田 侑加*; 高橋 正光; 池田 和磨*; 大下 祥雄*; 諸原 理*; 外賀 寛崇*; 森安 嘉貴*
AIP Advances (Internet), 6(3), p.035303_1 - 035303_6, 2016/03
被引用回数：4 パーセンタイル：19.99(Nanoscience & Nanotechnology)The formation and evolution of rotational twin (TW) domains introduced by a stacking fault during molecular-beam epitaxial growth of GaAs on Si (111) substrates were studied by in situ X-ray diffraction. To modify the volume ratio of TW to total GaAs domains, GaAs was deposited under high and low group V/group III (V/III) flux ratios. For low V/III, there was less nucleation of TW than normal growth (NG) domains, although the NG and TW growth rates were similar. For high V/III, the NG and TW growth rates varied until a few GaAs monolayers were deposited; the mean TW domain size was smaller for all film thicknesses.
X-ray diffraction下村 憲一*; 鈴木 秀俊*; 佐々木 拓生; 高橋 正光; 大下 祥雄*; 神谷 格*
Journal of Applied Physics, 118(18), p.185303_1 - 185303_7, 2015/11
被引用回数：9 パーセンタイル：38.07(Physics, Applied)Direct measurements on the growth of InAs quantum dots (QDs) and various cap layers during molecular beam epitaxy are performed by X-ray diffraction (XRD). The evolution of strain induced both in the QDs and cap layers during capping is discussed based on the XRD intensity transients obtained at various lattice constants. Transients with different features are observed from those obtained during InGaAs and GaAs capping, attributed to In-Ga intermixing between the QDs and the cap layer. Photoluminescence wavelength can be tuned by controlling the intermixing and the cap layer thickness. It is demonstrated that such information about strain is useful for designing and preparing novel device structures.
three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBE佐々木 拓生; 高橋 正光; 鈴木 秀俊*; 大下 祥雄*; 山口 真史*
Journal of Crystal Growth, 425, p.13 - 15, 2015/09
被引用回数：4 パーセンタイル：29.54(Crystallography) three-dimensional X-ray reciprocal space mapping (
3D-RSM) was employed for studying molecular beam epitaxial (MBE) growth of InGaAs multilayer structures on GaAs(001). Measuring the symmetric 004 diffraction allowed us to separately obtain film properties of individual layers and to track the real-time evolution of both residual strain and lattice tilting. In two- layer growth of InGaAs, significant plastic relaxation was observed during the upper layer growth, and its critical thickness was experimentally determined. At the same thickness, it was found that the direction of lattice tilting drastically changed. We discuss these features based on the Dunstan model and confirm that strain relaxation in the multilayer structure is induced by two kinds of dislocation motion (dislocation multiplication and the generation of dislocation half-loops).
山口 洋司*; 伊地知 亮*; 鈴木 善之*; 大岡 幸代*; 島田 啓二*; 高橋 直*; 鷲尾 英俊*; 中村 一世*; 高本 達也*; 今泉 充*; et al.
Proceedings of 42nd IEEE Photovoltaic Specialists Conference (PVSC-42) (CD-ROM), p.2407 - 2411, 2015/06
In order to develop high efficiency space solar cells with flexible and light weight, InGaP/GaAs/Ge Inverted Triple Junction (IMM-3J) solar cells mounted on film type sheet (film type space solar sheet) and glass type sheet (glass type space solar sheets) were fabricated and their reliability was investigated. As a result, no significant change in their characteristics (less than 1 % change) was observed for both types of space solar sheets after reliability tests, such as (1) thermal cycling (-180 to +120 
C, 1000 cycles), (2) humidity and temperature (65 C, humidity 90 %, 720h), (3) high temperature under vacuum condition (160 C, less than 10
Torr, 168h), and (4) high temperature (150 C, 1000 h). Both type space solar sheets also showed high radiation resistance compared to current version of space 3J solar cells. Therefore, we can conclude that the space solar sheets have enough reliability in space environments.
西 俊明*; 佐々木 拓生; 池田 和磨*; 鈴木 秀俊*; 高橋 正光; 下村 憲一*; 小島 信晃*; 大下 祥雄*; 山口 真史*
AIP Conference Proceedings 1556, p.14 - 17, 2013/09
被引用回数：0 パーセンタイル：0.01(Energy & Fuels) X-ray reciprocal space mapping during In
Ga
As/GaAs(001) MBE growth is performed to investigate effects of substrate misorientations on crystallographic tilting. It was found that evolution of the crystallographic tilt for the InGaAs films is strongly dependent on both layer structures and substrate misorientations. We discuss these observations in terms of an asymmetric distribution of dislocations.
高橋 正光; 仲田 侑加*; 鈴木 秀俊*; 池田 和磨*; 神津 美和; Hu, W.; 大下 祥雄*
Journal of Crystal Growth, 378, p.34 - 36, 2013/09
被引用回数：5 パーセンタイル：42.72(Crystallography)Epitaxial growth of III-V semiconductors on silicon substrates is a longstanding issue in semiconductor technology including optoelectronics, high-mobility devices and solar cells. In addition to a lattice mismatch of 4%, formation of antiphase domain boundaries makes the growth of GaAs/Si(001) more complicated than that of congeneric combinations, such as Ge/Si(001) and InGaAs/GaAs(001). In the present study, defects in GaAs/Si(001) epitaxial films are investigated by three-dimensional X-ray reciprocal-space mapping technique, which we have successfully applied for InGaAs/GaAs(001) growth. Experiments were carried out at a synchrotron beamline 11XU at SPring-8 using a molecular-beam epitaxy chamber integrated with a multi-axis X-ray diffractometer. Streaky scattering extending from the GaAs 022 peak in the 
directions was observed, indicating development of plane defects, such as facets and stacking faults.
Hu, W.; 鈴木 秀俊*; 佐々木 拓生*; 神津 美和*; 高橋 正光
Journal of Applied Crystallography, 45(5), p.1046 - 1053, 2012/10
被引用回数：12 パーセンタイル：72.05(Chemistry, Multidisciplinary)This paper describes the development of a high-speed three-dimensional reciprocal-space mapping method designed for the real-time monitoring of the strain relaxation process during the growth of heterostructure semiconductors. Each three-dimensional map is obtained by combining a set of consecutive images, which are captured during the continuous rotation of the sample, and calculating the reciprocal-space coordinates from the detector coordinate system. Using this method, the strain relaxation process of InGaAs heteroepitaxial films grown on GaAs(001) has been investigated.
佐々木 拓生*; 下村 憲一*; 鈴木 秀俊*; 高橋 正光; 神谷 格*; 大下 祥雄*; 山口 真史*
Japanese Journal of Applied Physics, 51(2), p.02BP01_1 - 02BP01_3, 2012/02
被引用回数：2 パーセンタイル：8.93(Physics, Applied)In-plane asymmetric strain relaxation in lattice-mismatched InGaAs/GaAs(001) heteroepitaxy is studied by three-dimensional X-ray reciprocal space mapping. Repeating crystal growth and growth interruptions during measurements allows us to investigate whether the strain relaxation is limited at a certain thickness or saturated. We find that the degree of relaxation during growth interruption depends on both the film thickness and the in-plane directions. Significant lattice relaxation is observed in rapid relaxation regimes during interruption. This is a clear indication that relaxation is kinetically limited. In addition, relaxation along the [110] direction can saturate more readily than that along the [
10] direction. We discuss this result in terms of the interaction between orthogonally aligned dislocations.
佐々木 拓生*; 鈴木 秀俊*; 稲垣 充*; 池田 和磨*; 下村 憲一*; 高橋 正光; 神津 美和*; Hu, W.; 神谷 格*; 大下 祥雄*; et al.
IEEE Journal of Photovoltaics, 2(1), p.35 - 40, 2012/01
被引用回数：5 パーセンタイル：22.57(Energy & Fuels)Compositionally step-graded InGaAs/GaAs(001) buffers with overshooting (OS) layers were evaluated by several characterization techniques for higher efficiency metamorphic III-V multijunction solar cells. By high-resolution X-ray diffraction, we found that fully relaxed or tensile strained top layers can be obtained by choosing appropriate OS layer thickness. Moreover, from real-time structural analysis using X-ray reciprocal space mapping ( RSM), it was proved that the top layer is almost strained to the OS layers, and it is independent of the thicknesses of the OS layers. Dislocations in the vicinity of the OS layers were observed by transmission electron microscopy, and the validity of results of RSM was confirmed from the viewpoint of misfit dislocation behavior. Finally, by photoluminescence measurements, we showed that tensile strained top layers may be suitable for the improvement of minority-carrier lifetime.
佐々木 拓生*; 鈴木 秀俊*; 高橋 正光; 大下 祥雄*; 神谷 格*; 山口 真史*
Journal of Applied Physics, 110(11), p.113502_1 - 113502_7, 2011/12
被引用回数：12 パーセンタイル：46.71(Physics, Applied)Dislocation-mediated strain relaxation during lattice-mismatched InGaAs/GaAs(001) heteroepitaxy was studied through X-ray reciprocal space mapping. At the synchrotron radiation facility SPring-8, a hybrid system of molecular beam epitaxy and X-ray diffractometry with a two-dimensional detector enabled us to perform reciprocal space mapping at high-speed and high-resolution. Using this experimental setup, the lattice constants, the diffraction broadenings along in-plane and out-of-plane directions, and the diffuse scattering were investigated. The strain relaxation processes were classified into four thickness ranges with different dislocation behavior. In addition, the existence of transition regimes between the thickness ranges was identified.
Sn cable-in-conduit conductors辺見 努; Harjo, S.; 伊藤 崇芳; 松井 邦浩; 布谷 嘉彦; 小泉 徳潔; 高橋 良和; 中嶋 秀夫; 相澤 一也; 鈴木 裕士; et al.
IEEE Transactions on Applied Superconductivity, 21(3), p.2028 - 2031, 2011/06
被引用回数：10 パーセンタイル：49.97(Engineering, Electrical & Electronic)熱処理温度923Kから運転温度5KまでのNbSn素線とステンレス鋼の熱膨張率の違いによって導体内には残留歪が生じる。NbSn素線の超伝導特性は残留歪の状態によって大きく変化するため、その特性を評価するためには残留歪の状態を把握する必要がある。しかし、複雑な構造とジャケット材の内側に素線が配置されているため、導体内の素線の歪を直接測定した研究はこれまでない。一方、J-PARCで2008年から運転が開始された工学材料回折装置「匠」は中性子回折を用いて歪として相対精度0.02%で測定することが可能である。本研究では、匠による中性子回折をITER TF導体の残留歪の測定に適用した。中性子回折では格子面間隔の変化により導体内の各相の歪を決定することが可能である。これにより、素線の残留歪の発生機構及び歪状態と超伝導性能の関係を明らかにすることが可能となった。
佐々木 拓生*; 鈴木 秀俊*; 崔 炳久*; 高橋 正光; 藤川 誠司; 神谷 格*; 大下 祥雄*; 山口 真史*
Journal of Crystal Growth, 323(1), p.13 - 16, 2011/05
被引用回数：20 パーセンタイル：82.16(Crystallography)In
Ga
As/GaAs(001)の分子線エピタキシャル成長中のひずみ緩和の様子をその場X線逆格子マッピングにより解析した。成長温度420, 445, 477Cにおける残留ひずみ・結晶性の変化の様子が測定された。Dodson-Tsaoの運動学的モデルは、実験による残留ひずみの測定結果とよく一致することがわかった。さらにひずみ緩和過程における転位の運動の温度依存性の解析から、転位の運動の熱励起を議論することが可能になった。
鈴木 秀俊*; 佐々木 拓生*; 崔 炳久*; 大下 祥雄*; 神谷 格*; 山口 真史*; 高橋 正光; 藤川 誠司
Applied Physics Letters, 97(4), p.041906_1 - 041906_3, 2010/07
被引用回数：32 パーセンタイル：75.03(Physics, Applied)Real-time three-dimensional reciprocal space mapping measurement during InGaAs/GaAs(001) molecular beam epitaxial growth has been performed to investigate anisotropy in relaxation processes. Anisotropies, strain relaxation, and crystal quality in [110] and [1
0] directions were simultaneously evaluated via the position and broadness of 022 diffraction. In the small-thickness region, strain relaxation caused by 
-dislocations is higher than that caused by 
-dislocations, and therefore crystal quality along [110] is worse than that along [10]. Rapid relaxation along both [110] and [10] directions occurs at almost the same thickness. After rapid relaxation, anisotropy in strain relaxation gradually decreases, whereas crystal quality along [10] direction, presumably due to -dislocations, becomes better that along [110] direction and the ratio does not decay with thickness.
佐々木 拓生*; 鈴木 秀俊*; 崔 炳久*; 高橋 正光; 藤川 誠司; 大下 祥雄*; 山口 真史*
Materials Research Society Symposium Proceedings, Vol.1268, 6 Pages, 2010/05
被引用回数：0 パーセンタイル：0.01(Materials Science, Multidisciplinary)The in situ X-ray reciprocal space mapping (in situ RSM) of symmetric diffraction measurements during lattice-mismatched InGaAs/GaAs(001) growth were performed to investigate the strain relaxation mechanisms. The evolution of the residual strain and crystal quality were obtained as a function of InGaAs film thickness. Based on the results, the correlation between the strain relaxation and the dislocations during the film growth were evaluated. As a result, film thickness ranges with different relaxation mechanisms were classified, and dominant dislocation behavior in each phase were deduced. From the data obtained in in situ measurements, the quantitative strain relaxation models were proposed based on a dislocation kinetic model developed by Dodson and Tsao. Good agreement between the in situ data and the model ensured the validity of the dominant dislocation behavior deduced from the present study.
real-time X-Ray reciprocal space mapping during InGaAs/GaAs growth for understanding strain relaxation mechanisms佐々木 拓生*; 鈴木 秀俊*; 崔 炳久*; Lee, J.-H.*; 高橋 正光; 藤川 誠司; 新船 幸二*; 神谷 格*; 大下 祥雄*; 山口 真史*
Applied Physics Express, 2, p.085501_1 - 085501_3, 2009/07
被引用回数：34 パーセンタイル：75.93(Physics, Applied) real-time X-ray diffraction measurements during InGaAs/GaAs(001) epitaxial growth are performed for the first time to understand the strain relaxation mechanisms in a lattice-mismatched system. The high resolution reciprocal space maps of 004 diffraction obtained at interval of 6.2 nm thickness enable transient behavior of residual strain and crystal quality to be observed simultaneously as a function of InGaAs film thickness. From the evolution of these data, five thickness ranges with different relaxation processes and these transition points are determined quantitatively, and the dominant dislocation behavior in each phase is deduced.
