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Takeyama, Akinori; Idesaki, Akira; Sugimoto, Masaki; Yoshikawa, Masahito
Journal of Asian Ceramic Societies (Internet), 3(4), p.402 - 406, 2015/12
Takeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; et al.
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.134 - 137, 2015/11
Hijikata, Yasuto*; Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi*; Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; et al.
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.130 - 133, 2015/11
Narisawa, Masaki*; Koka, Masashi; Takeyama, Akinori; Sugimoto, Masaki; Idesaki, Akira; Sato, Takahiro; Hokazono, Hiroki*; Kawai, Taketoshi*; Iwase, Akihiro*
Journal of the Ceramic Society of Japan, 123(9), p.805 - 808, 2015/09
Kajino, Mizuo*; Inomata, Yayoi*; Sato, Keiichi*; Ueda, Hiromasa*; Han, Z.*; An, J.*; Katata, Genki; Deushi, Makoto*; Maki, Takashi*; Oshima, Naga*; et al.
Atmospheric Chemistry and Physics, 12(24), p.11833 - 11856, 2012/12
Times Cited Count:45 Percentile:74.31(Environmental Sciences)A new aerosol chemical transport model, Regional Air Quality Model 2 (RAQM2), was developed to simulate Asian air quality. We implemented a simple version of a modal-moment aerosol dynamics model and achieved completely dynamic solution of a gas-to-particle mass transfer over a wide range of aerosol diameters from 1 nm to super micro m. To consider a variety of atmospheric aerosol properties, a category approach is utilized: aerosols are distributed into 4 categories, Aitken, accumulation, soot aggregates, and coarse mode. A regional-scale simulation was performed for the entire year of 2006, covering Northeast Asian region. Statistical analysis showed the model reproduced the regional-scale transport and transformation of the major inorganic anthropogenic and natural air constituents within factors of 2 to 5. Modeled size distributions of total weight and chemical components were consistent with the observations, indicating simulations of aerosol mixing types were successful.
Takeyama, Akinori; Sugimoto, Masaki; Yoshikawa, Masahito
Materials Transactions, 52(6), p.1276 - 1280, 2011/06
Times Cited Count:17 Percentile:63.45(Materials Science, Multidisciplinary)SiC membranes were prepared using curing of precursor polymer (polycarbosilane, PCS) film by electron beam irradiation in helium atmosphere. The membrane prepared via curing of PCS film coated using 10 mass % PCS solution for dip-coating followed by immersing it for 30 s in PCS solution, showed H permeance of 3.110 mol/m/s/Pa and the selectivity of 51 at 523 K. The H permeance of the membrane was increased proportional to the temperature by the activated diffusion of H. It indicates SiC film without pinholes or cracks formed on the support. As the pyrolysis temperature of cured PCS film was increased, the selectivity of the membrane reached the maximum at 923 K.
Takeyama, Akinori; Yamamoto, Shunya; Yoshikawa, Masahito; Hasegawa, Yoshio*; Awatsu, Satoshi*
JAEA-Research 2007-012, 29 Pages, 2007/03
The Sol-Gel derived precursor fiber was annealed under hydrogen disulfeid (HS) following oxygen atmosphere, Sulfer-doped titanium dioxide (TiO) fiber was obtained. Crystal structure of the fiber was identified as anatase phase of TiO. The energy band gap of the fiber was narrower by about 0.06 eV than that of anatase, which showed that it could absorb visible light. The fiber contains about 0.58 atomic % of Sulfer, and they located at the oxygen lattice site of TiO. Under visible light illumination, the fiber degraded Trichroloethylen (TCE) and produced carbon dioxide (CO). This shows Sulfer-doped TiO fiber has the photocatalytic activity under visible light illumination.
Yamamoto, Shunya; Nagata, Shinji*; Takeyama, Akinori; Yoshikawa, Masahito
Nuclear Instruments and Methods in Physics Research B, 249(1-2), p.374 - 376, 2006/08
Times Cited Count:8 Percentile:50.25(Instruments & Instrumentation)no abstracts in English
Yamamoto, Shunya; Takeyama, Akinori; Yoshikawa, Masahito
Nuclear Instruments and Methods in Physics Research B, 242(1-2), p.377 - 379, 2006/01
Times Cited Count:9 Percentile:53.51(Instruments & Instrumentation)no abstracts in English
Yamamoto, Shunya; Nagata, Shinji*; Takeyama, Akinori; Yoshikawa, Masahito
Transactions of the Materials Research Society of Japan, 30(3), p.789 - 792, 2005/09
no abstracts in English
Takeyama, Akinori; Yamamoto, Shunya; Ito, Hiroshi; Yoshikawa, Masahito
Nuclear Instruments and Methods in Physics Research B, 232(1-4), p.333 - 337, 2005/05
Times Cited Count:0 Percentile:0.01(Instruments & Instrumentation)Cu precipitates were formed on Si(100) by 200 keV Cu ion implantation and subsequent annealing at 773 K. The shape of the Cu precipitates evolved from a large rectangle to a small elongated pyramid with increasing annealing time. This shape evolution seemed to result from the epitaxial formation of Cu precipitates to minimize the interfacial energy between the precipitate and the Cu implanted substrate. The average density of Cu precipitates monotonously increased and the average diameter of Cu precipitates decreased with increasing annealing time up to 1 h. These indicate that the morphology, size and average density of Cu precipitates can be controlled by varying annealing time, and that Cu ion implantation and subsequent annealing were effective in producing a substrate dispersed with catalytic particles for oxide nanorods growth.
Takeyama, Akinori; Yamamoto, Shunya; Yoshikawa, Masahito; Ito, Hiroshi
Japanese Journal of Applied Physics, Part 1, 44(1B), p.750 - 753, 2005/01
Times Cited Count:0 Percentile:0.00(Physics, Applied)Pyramid shaped Cu precipitates were formed on Si (100) surface as a result of 200 keV Cu ion implantation and subsequent annealing. Then, ZnO nanorods were successfully synthesized on the Cu implanted substrates by chemical vapor transport (CVT). Hexagonal shaped nanorods with a diameter of 200 nm were grown nearly perpendicular to the Cu implanted substrate and their average density was increased as increasing that of Cu precipitates. The facts strongly indicate the Cu precipitates served as the catalytic particles for the growth of ZnO rods.
Takeyama, Akinori; Sugimoto, Masaki; Yoshikawa, Masahito
no journal, ,
There is growing interest in H production using inorganic membrane stable in reactant gases such as carbon monoxide (CO) or steam. In this study, we prepared an inorganic membrane from polymer-derived silicon carbide (SiC) using electron beam curing of polymer precursor film. Alpha almina tube, which is chemically stable but has sized pore (averaged diameter size 100 nm), was used as the support. First, supports were dipped in the 10 mass% polycarbosilne (PCS), polymer precursor solution for 1 s and drawn up (the first dipping). After drying, some of those supports coated with PCS film were immersed into another PCS solution whose concentration was 3 mass% for 0.8, 1.5 and 2 s (the second dipping). They were cured by electron beam irradiation in helium atmosphere and pylolyzed at 973 K in argon atmosphere. H permeance of SiC membrane prepared via only the first dipping increased with increasing the temperature, but not following the Arrhenius plot. This means sub-nano meter sized pores and a few of large defects coexisted in the membrane. Whereas, H permeance of the membrane prepared via the first and 1.5s of second dipping increased following the Arrhenius plot. Activation energy of 7.5 kJ/mol calculated from slope of the plot indicates that pores of the support were plugged by SiC film and thermally activated H molecules diffused through the membrane by molecular sieving mechanism.
Takeyama, Akinori; Matsuda, Takuma*; Yokoseki, Takashi*; Mitomo, Satoshi*; Murata, Koichi*; Makino, Takahiro; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.
no journal, ,
Effect of -ray irradiation under high temperature and humidity circumstances on the electrical characteristics of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated. In the case of irradiation under high humidity circumstance, trapped oxide and interface charges densities generated due to irradiation were smaller than those for irradiation in dry circumstance. It is concluded that humidity circumstance suppressed the degradation of the electrical properties due to irradiation including threshold voltage shift and leakage current.
Takeyama, Akinori; Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi*; Makino, Takahiro; Onoda, Shinobu; Oshima, Takeshi; Okubo, Shuichi*; Tanaka, Yuki*; et al.
no journal, ,
Oxide thickness dependence of -ray irradiation response on Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated. As a result of irradiation, the threshold voltage V for both SiC MOSFETs with gate oxide of 30 nm or 60 nm thick shifted to negative voltage-side gently. However, the V for 60 nm thick more immediately decreased over 400 kGy. It is found that SiCMOSFETs with smaller thickness has a higher radiation tolerance.
Takeyama, Akinori; Murata, Koichi*; Mitomo, Satoshi*; Matsuda, Takuma*; Yokoseki, Takashi*; Makino, Takahiro; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.
no journal, ,
Deterioration of electrical property of SiCMOSFETs due to irradiation was reduced compared with no biased ones, when the SiC MOSFETs with switching bias were irradiated. In order to clarify this mechanism, SiCMOSFETs were irradiated up to 50 kGy with switching bias applied to gate oxide from 4.5 to 0 V. As a result, the large negative shift of threshold voltage V due to irradiation with positive bias significantly recovered in the cases that the bias switched to zero. It shows electrical property of SiCMOSFETs were immediately relieved when applied bias was removed by switching.
Okayasu, Satoru; Takeyama, Akinori*; Oshima, Takeshi*; Harii, Kazuya*; Ieda, Junichi; Ishida, Masahiko*; Saito, Eiji
no journal, ,
We are investigating the applications of spintronics devices in atomic fields. We reported the Tolerance of spin-Seebeck thermoelectricity against heavy swift ion irradiation previously. The tolerance of spin-Seebeck thermoelectricity against gamma ray irradiation will be reported at this conference. The spin thermoelectric properties after gamma ray irradiation up to 1MGy at room temperature and at 150C will be reported.
Takeyama, Akinori; Sugimoto, Masaki; Yoshikawa, Masahito
no journal, ,
Silicon carbide (SiC) films as a hydrogen separation membrane were prepared using a novel preparation technique. The films were obtained by a coating of precursor films on porous alumina supports followed by an immersion into cycohexane, curing in an inert atmosphere and pyrolisis. A selectivity of the film, which is defined as the ratio of the amount of hydrogen (H) to nitrogen (N) which passed thorough the membrane, was increased up to 6.1 as increasing the immersion time. This is supposed that precursor in pores is dissolved by cyclohexane and pores are filled with the precursor solution, which leads to a decrease of the pore diameter and an improvement of the selectivity.
Ieda, Junichi; Okayasu, Satoru; Takeyama, Akinori*; Harii, Kazuya*; Oshima, Takeshi*; Ishida, Masahiko*; Saito, Eiji
no journal, ,
Takeyama, Akinori; Sugimoto, Masaki; Yoshikawa, Masahito
no journal, ,
no abstracts in English