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beam exposuresTagawa, Masahito*; Yokota, Kumiko*; Nishizaki, Noriaki*; Miyagai, Suguru*; Yoshigoe, Akitaka; Teraoka, Yuden
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Fast nitrogen molecular beams with 2 keV kinetic energy were irradiated at an Si(001) surface with an ultra-thin oxide overlayer. Photoemission peaks of bulk Si atoms became to be not clear. This fact indicates that nitrogen molecules transmitted from the oxide film react with bulk Si atoms. On the other hand, slow nitrogen molecular beams with 1.6 eV to 6.9 eV incident energy were irradiated at the oxide film. The surfaces were observed by photoemission spectroscopy with synchrotron radiation. With increasing the incident energy, SiN-related part in the Si2p photoemission peak increased in the bulk-sensitive measurements rather than surface-sensitive measurements. This fact reveals that nitrogen molecules are impinged into the oxide film even in such low energy and chemical bonds with Si atoms are formed near the interface.
Hayakawa, Ryoma*; Nakae, Mari*; Yoshida, Shinji*; Tagawa, Masahito*; Teraoka, Yuden; Yoshimura, Takeshi*; Ashida, Atsushi*; Kunugi, Shunsuke*; Uehara, Tsuyoshi*; Fujimura, Norifumi*
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Chemical bonding states of silicon nitride films formed by an atmospheric plasma method and a RF plasma method were analyzed by photoemission spectroscopy with synchrotron radiation and compared each other. The SiN/Si(111) interface formed by the RF plasma method consisted of 5 components. On the other hand, the SiN/Si(111) interface formed by the atmospheric plasma method consisted of 4 components. The Si
N component is in the interface formed by the RF plasma method.
Nakagawa, Satoko*; Sone, Yoshitsugu*; Tajima, Michio*; Oshima, Takeshi; Ito, Hisayoshi
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no abstracts in English
Asaoka, Hidehito; Yamazaki, Tatsuya; Shamoto, Shinichi
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no abstracts in English
Saeki, Morihisa; Oba, Hironori; Yamamoto, Hiroyuki; Yokoyama, Atsushi
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no abstracts in English
Abe, Hiroshi; Uchida, Hirohisa*; Morimoto, Ryo*; Ito, Hisayoshi
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no abstracts in English
Takahashi, Masamitsu; Kaizu, Toshiyuki; Mizuki, Junichiro
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no abstracts in English
Hayashi, Kazuhiko; Kawasuso, Atsuo; Ichimiya, Ayahiko
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no abstracts in English
Ru
OTerai, Kota; Okane, Tetsuo; Takeda, Yukiharu; Fujimori, Shinichi; Saito, Yuji; Yoshii, Kenji; Owada, Kenji; Inami, Toshiya; Arita, Masashi*; Shimada, Kenya*; et al.
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no abstracts in English
Oikawa, Fumitake*; Wakahara, Akihiro*; Takemoto, Kazumasa*; Okada, Hiroshi*; Oshima, Takeshi; Ito, Hisayoshi
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-FeSi
Zhuravlev, A.; Yamaguchi, Kenji; Shimura, Kenichiro*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi; Terai, Takayuki*
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no abstracts in English
-FeSi thin film prepared by IBSD methodSasase, Masato*; Shimura, Kenichiro*; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi
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Yamamoto, Hiroyuki; Oba, Hironori; Sasase, Masato*; Yamaguchi, Kenji; Shamoto, Shinichi; Yokoyama, Atsushi; Hojo, Kiichi
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no abstracts in English
Fujinami, Masanori*; Watanabe, Kazuya*; Oguma, Koichi*; Akahane, Takashi*; Kawasuso, Atsuo; Maekawa, Masaki; Matsukawa, Kazuto*; Harada, Hirofumi*
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no abstracts in English
Shibata, Tokushi
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An estimation of the fast neutron fluence for the Hiroshima Atomic Bomb was carried out. The method is to estimate the fluence using the amount of the 
Ni contents in copper samples, neutron spectrum for the Hiroshima Atomic Bomb, and the excitation function of the Cu(n, p) Ni reaction. The extraction method of the trace amount of the Ni from copper samples was developed. The Ni was measured by a low-background liquid-scintillation counter. The excitation function of the Cu(n,p) Ni reaction was measured. The fluence was obtained from the measured Ni amount using the neutron spectrum and the excitation function of the reaction. The obtained results are consistent with the values given by the new dosimetry system D02.
Miyamoto, Haruki; Oshima, Takeshi; Imaizumi, Mitsuru*; Kibe, Koichi*; Ito, Hisayoshi; Kawano, Katsuyasu*
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1 surface, 2Togashi, Hideaki*; Suemitsu, Maki*; Asaoka, Hidehito; Yamazaki, Tatsuya
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crystalsMurakami, Go*; Abe, Kenichiro*; Ashida, Atsushi*; Wakita, Kazuki*; Watase, Seiji*; Izaki, Masanobu*; Oshima, Takeshi; Morishita, Norio; Ito, Hisayoshi
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no abstracts in English
Onoda, Shinobu; Hirao, Toshio; Mishima, Kenta; Kawano, Katsuyasu*; Ito, Hisayoshi
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no abstracts in English
Mori, Michiaki; Kando, Masaki; Daito, Izuru; Kotaki, Hideyuki; Hayashi, Yukio; Ogura, Koichi; Sagisaka, Akito; Nakajima, Kazuhisa*; Bulanov, S. V.; Daido, Hiroyuki; et al.
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no abstracts in English