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7 studied by real-time photoelectron spectroscopy and theoretical calculationsTang, J.*; 西本 究*; 小川 修一*; 吉越 章隆; 石塚 眞治*; 寺岡 有殿; 高桑 雄二*
no journal, ,
Temperature dependence of oxygen adsorption states at Si(111)-77 surface was observed by real-time photoelectron spectroscopy. Moreover, the reaction path of O
at the surface was obtained by molecular dynamics simulations and density functional theoretical calculations. The temperature dependent increase of saturated oxygen indicates that more oxygen atoms adsorb at the surface at higher tempetarures. Work function increases initially at low temperatures and then significantly decreases. It is known that work function is due to the surface dipole layer and the band bending effects. The band bending is found to be small during the initial oxidation, which implies that the surface dipole layer mainly affects work function.
-sexithiophene thin films grown on layered materials小玉 開*; 平賀 健太*; 大野 真也*; 関口 哲弘; 馬場 祐治; 田中 正俊*
no journal, ,
有機半導体分子は配向方向により電子的性質が異なるため、分子配向の制御に興味がもたれている。WSeやGaSeは層構造をもつ半導体であり、Si表面のように有機物を分解せず、またSiO表面のようにランダム構造でなく規則正しい表面構造をもつことから、有機半導体分子を規則正しく配列できる基板の候補として期待されている。本研究では、SiO/Si表面および 劈開して得たWSe2とGaSeの清浄基板上に有機半導体である-チオフェン6量体(6T)を分子層数制御して真空蒸着を行い、単分子以下から数層の薄膜を作製した。直線偏光放射光を用いた角度依存X線吸収端微細構造(NEXAFS)法により、有機半導体分子の配向構造を解析した。分子配向角度が膜厚に依存して大きく変化すること、また基板の種類により膜厚依存性がかなり異なることが見だされた。基板の最表面原子構造と6T分子固体の構造的な整合性および分子-基板間相互作用の違いが系の安定性に影響し、配向構造が異なると考えられる。
横田 久美子*; 渡辺 大輝*; 初田 光嶺*; 吉越 章隆; 寺岡 有殿; 田川 雅人*
no journal, ,
In this study, oxidation of Si-atom in DLC with energetic O-atom was investigated by a combination of broad O-atom beam and synchrotron radiation photoelectron spectroscopy. It was observed that amount of O at the exposed surface showed a peak at a high-energy position. The result clearly indicated that the oxidation efficiency strongly depends on the collision energy. It was also examined that the amount of suboxides decreased with increasing the collision energy of incident O-atom above 4 eV. It was concluded that formation of SiO by the collision of energetic O-atom is promoted with collision energy above 5 eV at room temperature.