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Nagai, Takayuki; Okamoto, Yoshihiro; Yamagishi, Hirona*; Shibata, Daisuke*; Kojima, Kazuo*; Hasegawa, Takehiko*; Sato, Seiichi*; Fukaya, Akane*; Hatakeyama, Kiyoshi*
JAEA-Research 2023-004, 45 Pages, 2023/09
The local structure of glass-forming elements and waste elements in borosilicate glasses varies with its chemical composition. In this study, simulated waste glass samples were prepared and the chemical state regarding boron (B), silicon (Si) and waste elements of iron (Fe), cesium (Cs) were estimated by using XAFS measurement in soft X-ray region. To understand the chemical stability of simulated waste glasses, XANES spectra of B K-edge, Fe L, L
-edge, and Cs M
, M
-edge were measured on the glass surface exposed to the leachate. As a result, it was found that the glass surface exposed to the leachate was changed and it was difficult to obtain a clear XANES spectrum. From the B K-edge XANES spectra on glass surfaces exposed to the leachate, an increase in three-coordination of B-O (BO
) and a decrease in four-coordination of B-O (BO
) were observed compared to the glass surfaces before immersion. The XANES spectra of Fe L
, L
-edge, and Cs M
, M
-edge show that as the exposure time in the leachate increases, the Cs present on the glass surface dissolves into the leachate. The XANES spectra of Si K-edge were measured on simulated waste glass surfaces before immersion, and it was confirmed that the change in XANES spectra given by Na
O concentration had a larger effect than the waste component concentration.
Kawabori, Tatsuru*; Watanabe, Masashi; Imai, Yoshiyuki; Ueta, Shohei; Yan, X.; Mizoshiri, Mizue*
Applied Physics A, 129(7), p.498_1 - 498_9, 2023/07
Times Cited Count:0 Percentile:0.00(Materials Science, Multidisciplinary)We investigated a potential of femtosecond laser sintering of silicon carbide (SiC) using the nanoparticles in air. A SiC nanoparticle ink including polyvinylpyrrolidone and ethylene glycol exhibited intense absorption by SiC nanoparticles at the wavelength of 780 nm. The whole of the sintered film patterns from the surface to the bottom underwent significant oxidation at a scanning speed of 1 mm/s, suggesting that the excessive energy irradiation generated silicon oxides. In contrast, the patterns fabricated by laser scanning at a raster pitch of 30 m at which a sintered area was observed at a scanning speed of 5 mm/s, exhibited no significant difference in oxidation of the raw SiC nanoparticles except for the surfaces from 1.72
m. These results indicate that the irradiation of femtosecond laser pulses generated the sintered SiC patterns without additional atmospheric oxidation of the raw materials because of its low heat accumulation. In additions, the dispersant of polyvinylpyrrolidone and ethylene glycol did not affect the sintering by an X-ray photoelectron spectroscopy. This vacuum-free direct printing technique has the potential for additive manufacturing.
Nagai, Takayuki; Tone, Masaya; Katsuoka, Nanako; Okamoto, Yoshihiro; Baba, Yuji*; Akiyama, Daisuke*
Photon Factory Activity Report 2022 (Internet), 3 Pages, 2023/00
no abstracts in English
Nagai, Takayuki; Okamoto, Yoshihiro; Baba, Yuji*; Akiyama, Daisuke*; Arima, Tatsumi*
Photon Factory Activity Report 2021 (Internet), 2 Pages, 2022/00
no abstracts in English
Nagai, Takayuki; Shimoyama, Iwao; Okamoto, Yoshihiro; Akiyama, Daisuke*; Arima, Tatsumi*
Photon Factory Activity Report 2019 (Internet), 3 Pages, 2020/00
no abstracts in English
Yoshigoe, Akitaka
X-sen Kodenshi Bunkoho, p.271 - 282, 2018/12
Based on the series of author's studies, the author explains the time-resolved synchrotron radiation X-ray photoelectron spectroscopy and supersonic oxygen molecular beam study on the adsorption reaction dynamics of oxygen molecules at the Si single crystal surface in the section 5.10 of the new textbook "X-ray Photoelectron Spectroscopy" (Kodan-sha) edited by Yuji Takakuwa.
Oshima, Takeshi; Yokoseki, Takashi; Murata, Koichi; Matsuda, Takuma; Mitomo, Satoshi; Abe, Hiroshi; Makino, Takahiro; Onoda, Shinobu; Hijikata, Yasuto*; Tanaka, Yuki*; et al.
Japanese Journal of Applied Physics, 55(1S), p.01AD01_1 - 01AD01_4, 2016/01
Times Cited Count:14 Percentile:54.35(Physics, Applied)Taguchi, Tomitsugu; Yamamoto, Shunya; Kodama, Katsuaki; Asaoka, Hidehito
Carbon, 95, p.279 - 285, 2015/12
Times Cited Count:11 Percentile:35.20(Chemistry, Physical)Amorphous SiC nanotubes are successfully synthesized by 340 keV Si ions irradiation of polycrystalline SiC nanotubes for the first time. A polycrystalline/amorphous heterostructure SiC nanotube, in which polycrystalline SiC and amorphous SiC coexist in the same nanotube, is also synthesized by ions irradiation with a mask in front of polycrystalline SiC nanotube. According to electron energy loss spectroscopy evaluation, the plasmon energies of SiC nanotube change rapidly at the interface between polycrystalline and amorphous regions. The volume swelling by amorphization evaluated from the differences of plasmon energies is approximately 5.0%. This result reveals that the further relaxed amorphous SiC nanotubes with higher density can be produced. The graphitic shells in carbon layer of C-SiC nanotube gradually bend to the radial direction of nanotube by the ion irradiation. Since the graphite (002) spots in the selected area electron diffraction pattern are clearly observed even after the ion irradiation, the carbon layer in C-SiC nanotube has certain crystallinity. Moreover, the new multi-walled carbon nanotube with the graphitic shells completely parallel to the radial direction of nanotube is also produced inside the amorphous SiC tubular layer in the case of C-SiC nanotube with large caliber.
Takeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; et al.
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.134 - 137, 2015/11
Iwamoto, Naoya*; Azarov, A.*; Oshima, Takeshi; Moe, A. M. M.*; Svensson, B. G.*
Journal of Applied Physics, 118(4), p.045705_1 - 045705_8, 2015/07
Times Cited Count:6 Percentile:26.71(Physics, Applied)Lohrmann, A.*; Iwamoto, Naoya*; Bodrog, Z.*; Castelletto, S.*; Oshima, Takeshi; Karle, T. J.*; Gali, A.*; Prawer, S.*; McCallum, J. C.*; Johnson, B. C.*
Nature Communications (Internet), 6, p.7783_1 - 7783_7, 2015/07
Times Cited Count:145 Percentile:96.88(Multidisciplinary Sciences)Pastuovi,
*; Capan, I.*; Cohen, D.*; Forneris, J.*; Iwamoto, Naoya*; Oshima, Takeshi; Siegele, R.*; Hoshino, Norihiro*; Tsuchida, Hidekazu*
Nuclear Instruments and Methods in Physics Research B, 348, p.233 - 239, 2015/04
Times Cited Count:7 Percentile:50.83(Instruments & Instrumentation)Matsuura, Hideharu*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi
Physica B; Condensed Matter, 376-377, p.342 - 345, 2006/04
Times Cited Count:8 Percentile:38.33(Physics, Condensed Matter)no abstracts in English
Son, N. T.*; Umeda, Takahide*; Isoya, Junichi*; Gali, A.*; Bockstedte, M.*; Magnusson, B.*; Ellison, A.*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; et al.
Physica B; Condensed Matter, 376-377, p.334 - 337, 2006/04
Times Cited Count:3 Percentile:17.92(Physics, Condensed Matter)no abstracts in English
Pensl, G.*; Ciobanu, F.*; Frank, T.*; Kirmse, D.*; Krieger, M.*; Reshanov, S.*; Schmid, F.*; Weidner, M.*; Oshima, Takeshi; Ito, Hisayoshi; et al.
Microelectronic Engineering, 83(1), p.146 - 149, 2006/01
Times Cited Count:15 Percentile:59.20(Engineering, Electrical & Electronic)no abstracts in English
Matsuura, Hideharu*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi
Microelectronic Engineering, 83(1), p.17 - 19, 2006/01
Times Cited Count:3 Percentile:24.37(Engineering, Electrical & Electronic)no abstracts in English
Isoya, Junichi*; Katagiri, Masayuki*; Umeda, Takahide*; Son, N. T.*; Henry, A.*; Gali, A.*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Janzn, E.*
Materials Science Forum, 527-529, p.593 - 596, 2006/00
no abstracts in English
Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Onoda, Shinobu; Hirao, Toshio; Ito, Hisayoshi
Materials Science Forum, 527-529, p.1347 - 1350, 2006/00
Charge induced in 6H-SiC pn diodes by oxygen ion microbeams was examined in an energy range between 6 and 18 MeV. To minimize the influence of damage, single ion hit Transient Ion Beam Induced Current (TIBIC) measurement system, in which the transient current induced by single ion incidence can be measured, was used in this study. The value of charge increases with increasing reverse applied bias, and the saturation of charge is observed when the depletion layer becomes longer than ion range. An increase of collected charge by the funneling effect (the generation of a transient electric filed) is observed in the case of the depletion layer shorter than ion range. The charge collection efficiency is estimated to be 100 % in the saturation region (the depletion layer longer than ion range). It strongly suggests that high quality particle detectors are fabricated using SiC.
Son, N. T.*; Umeda, Takahide*; Isoya, Junichi*; Gali, A.*; Bockstedte, M.*; Magnusson, B.*; Ellison, A.*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; et al.
Materials Science Forum, 527-529, p.527 - 530, 2006/00
no abstracts in English
Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Yamakawa, Takeshi; Onoda, Shinobu; Wakasa, Takeshi; Laird, J. S.; Hirao, Toshio; Kamiya, Tomihiro; Ito, Hisayoshi; et al.
Nuclear Instruments and Methods in Physics Research A, 541(1-2), p.236 - 240, 2005/04
Times Cited Count:9 Percentile:55.79(Instruments & Instrumentation)In order to develop particle detectors based on SiC semiconductor, SiC pn-diodes were irradiated with microbeam of 15MeV oxygen ions. The transient current was measured using the single ion hit transient ion beam induced current (TIBIC) system at TIARA. As the results, peak intensity of transient current induded by ion irradiation increased and falltime decreased with increasing applied bias. By the integration of transient current, the charge collection was estimated. It was found that charges generated in deeper region beyond the depletion layer can be collected by the funneling effect.