JOPSS - Search Results

Search Results: Records 1-1 displayed on this page of 1

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Journal Articles

Electrical characteristics of interface defects in oxides grown at 1200 $^{circ}$ C in dry oxygen ambient on silicon carbide and their thermal annealing effects

Yoshikawa, Masahito; Ishida, Yuki*; Jikimoto, Tamotsu*; Hijikata, Yasuto*; Ito, Hisayoshi; Okumura, Hajime*; Takahashi, Tetsuo*; Tsuchida, Hidekazu*; Yoshida, Sadafumi*

Denshi Joho Tsushin Gakkai Rombunshi, C, 86(4), p.426 - 433, 2003/04

https://ci.nii.ac.jp/naid/110003172129

no abstracts in English

Presentation/Publication Type

Journal/Book Title

Meeting title

First Author

Keyword

Language

Publication Year

Held year of conference

Electrical characteristics of interface defects in oxides grown at 1200 C in dry oxygen ambient on silicon carbide and their thermal annealing effects

Electrical characteristics of interface defects in oxides grown at 1200 $^{circ}$ C in dry oxygen ambient on silicon carbide and their thermal annealing effects